NTMFS5844NLT1G ON Semiconductor, NTMFS5844NLT1G Datasheet - Page 3

MOSFET N-CH 60V 60A SO-8FL

NTMFS5844NLT1G

Manufacturer Part Number
NTMFS5844NLT1G
Description
MOSFET N-CH 60V 60A SO-8FL
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTMFS5844NLT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1460pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
8-TDFN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
16 mOhms
Forward Transconductance Gfs (max / Min)
27 s
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
60 A
Power Dissipation
1.9 W, 3 W, 57 W, 89 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
30 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS5844NLT1G
Manufacturer:
VISHAY
Quantity:
14 000
Part Number:
NTMFS5844NLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.030
0.025
0.020
0.015
0.010
0.005
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
80
70
60
50
40
30
20
10
0
−50
2
0
Figure 3. On−Resistance vs. Gate−to−Source
V
I
GS
D
10 V
Figure 5. On−Resistance Variation with
−25
= 10 A
Figure 1. On−Region Characteristics
V
= 10 V
V
DS
GS
T
1
4
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
V
GS
25
Temperature
2
6
= 5 V
Voltage
50
3
8
75
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
TYPICAL CHARACTERISTICS
100
T
I
10
T
4
D
J
J
= 25°C
= 10 A
= 25°C
125
http://onsemi.com
150
5
12
3
100,000
10,000
0.016
0.014
0.012
0.010
0.008
1,000
100
80
70
60
50
40
30
20
10
0
10
1
5
Figure 4. On−Resistance vs. Drain Current and
V
V
Figure 6. Drain−to−Source Leakage Current
GS
DS
T
J
= 0 V
≥ 10 V
= 25°C
10
V
V
Figure 2. Transfer Characteristics
DS
GS
T
T
20
J
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, GATE−TO−SOURCE VOLTAGE (V)
= 25°C
= 125°C
2
15
I
D
, DRAIN CURRENT (A)
Gate Voltage
vs. Voltage
30
V
20
GS
T
= 4.5 V
3
J
V
= 150°C
GS
T
J
25
= −55°C
= 10 V
40
T
J
= 125°C
30
4
50
35
40
60
5

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