STW34NM60N STMicroelectronics, STW34NM60N Datasheet - Page 8

• Manufacturer Part Number: STW34NM60N
• Description: MOSFET N-CH 600V 29A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW34NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2722pF @ 100V
• Power - Max: 210W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10975-5

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Normalized B
V
BV
GS(th)
(norm)
1.05
1.00
0.80
1.07
(norm)
1.10
0.70
1.03
0.99
0.97
0.90
1.01
0.95
0.93
DSS
-50
-50
vs temperature
-25
-25
0
0
25
25
I
D
I
=1mA
D
50
50
VDSS
=250µA
75
75
vs temperature
100
100
T
T
J
(°C)
J
Doc ID 17740 Rev 3
(°C)
AM09026v1
AM00897v1
Figure 15. Normalized on resistance vs
Figure 17. Source-drain diode forward
STF34NM60N, STP34NM60N, STW34NM60N
R
DS(on)
(norm)
(V)
V
0.5
0.6
0.9
0.7
1.7
1.4
0.8
0.4
1.9
1.5
1.3
1.1
1.0
2.1
1.6
1.2
SD
-50
0
temperature
characteristics
T
-25
J
=150°C
5
0
T
J
=-50°C
10
25
I
D
15
=14.5A
50
75
20
T
J
=25°C
100
25
T
J
(°C)
I
AM09027v1
AM09039v1
SD
(A)