STL21N65M5 STMicroelectronics, STL21N65M5 Datasheet

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STL21N65M5

Manufacturer Part Number
STL21N65M5
Description
MOSFET N-CH 650V 17A POWERFLAT88
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STL21N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 100V
Power - Max
3W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10961-2
Features
1. The value is rated according to R
Application
Switching applications
Description
The device is N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
April 2011
STL21N65M5
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Type
STL21N65M5
Order code
Device summary
N-channel 650 V, 0.150 Ω , 17 A PowerFLAT™ (8x8) HV
V
T
710 V
DSS
Jmax
ultra low gate charge MDmesh™ V power MOSFET
@
< 0.179 Ω
thj-case
R
max
DS(on)
21N65M5
Marking
17 A
Doc ID 17438 Rev 3
I
D
(1)
Figure 1.
PowerFLAT™ (8x8) HV
Package
Internal schematic diagram
STL21N65M5
Tape and reel
Packaging
www.st.com
1/14
14

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STL21N65M5 Summary of contents

Page 1

... Table 1. Device summary Order code STL21N65M5 April 2011 R DS(on max ( thj-case Figure 1. Marking 21N65M5 PowerFLAT™ (8x8) HV Doc ID 17438 Rev 3 STL21N65M5 Internal schematic diagram Package Packaging Tape and reel 1/14 www.st.com 14 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 17438 Rev 3 STL21N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STL21N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (1),(2) I Drain current (pulsed) DM (3) I Drain current (continuous (3) I Drain current (continuous (2),(3) I Drain current (pulsed) DM (3) P Total dissipation at T TOT ...

Page 4

... MHz open drain V = 520 Figure 16) (see DSS DSS Doc ID 17438 Rev 3 Min. Typ 650 =125 ° 250 µ 8.5 A 0.150 Min. Typ. 1950 - 133 = 2 STL21N65M5 Max. Unit V 1 µA 100 µA 100 Ω 0.179 Max. Unit Ω oss ...

Page 5

... STL21N65M5 Table 6. Switching times Symbol t Turn-off delay time d(off) t Rise time r t Cross time c t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current ...

Page 6

... Q (nC) g Doc ID 17438 Rev 3 Thermal impedance Zth PowerFLAT 8x8 HV δ=0.5 0.2 0.1 -1 0.05 0.02 0.01 Single pulse - Transfer characteristics I D (A) V =15V Static drain-source on resistance (Ω 0.17 0.15 0.14 0.13 0.12 0. STL21N65M5 ( AM05494v1 10 V (V) GS AM05495v1 16 I (A) D ...

Page 7

... STL21N65M5 Figure 8. Output capacitance stored energy (µJ) E oss 200 300 0 100 Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 12. Source-drain diode forward characteristics V SD (V) T =-50°C J 1.0 0.9 0.8 0.7 T =150°C J 0.6 0.5 0.4 ...

Page 8

... Electrical characteristics Figure 14. Switching losses vs gate resistance (1) E (µJ) I =11A D 160 V =400V DD 140 V =10V GS 120 100 Eon including reverse recovery of a SiC diode 8/14 AM05541v1 Eon Eoff (Ω) G Doc ID 17438 Rev 3 STL21N65M5 ...

Page 9

... STL21N65M5 3 Test circuits Figure 15. Switching times test circuit for resistive load D.U. Figure 17. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 19. Unclamped inductive waveform Figure 16. Gate charge test circuit 3.3 2200 µF µ ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/14 Doc ID 17438 Rev 3 STL21N65M5 ® ...

Page 11

... STL21N65M5 Table 8. PowerFLAT™ 8x8 HV mechanical data Dim Figure 21. PowerFLAT™ 8x8 HV drawing mechanical data PIN#1 ID 0.08 C Min. 0.80 0.95 7.05 4.15 0.40 e BOTTOM VIEW b D2 INDEX AREA TOP VIEW Doc ID 17438 Rev 3 Package mechanical data mm Typ. Max. 0.90 1.00 0.02 ...

Page 12

... Package mechanical data Figure 22. PowerFLAT™ 8x8 HV recommended footprint 12/14 7.30 2.00 1.05 Doc ID 17438 Rev 3 STL21N65M5 AM05543v1 ...

Page 13

... STL21N65M5 5 Revision history Table 9. Document revision history Date 28-Apr-2010 14-Jun-2010 07-Apr-2011 Revision 1 First release typical value has been corrected. DS(on) Figure 2: Safe operating 3 Figure 7: Static drain-source on resistance Doc ID 17438 Rev 3 Revision history Changes area, Figure 3: Thermal impedance have been updated. and ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 17438 Rev 3 STL21N65M5 ...

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