STP80NF70 STMicroelectronics, STP80NF70 Datasheet - Page 5

• Manufacturer Part Number: STP80NF70
• Description: MOSFET N-CH 68V 98A TO-220AB
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF70

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 68V
• Current - Continuous Drain (id) @ 25° C: 98A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2550pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10964-5

STP80NF70
Table 7.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17610 Rev 1
I
I
di/dt = 100 A/µs,
V
Figure 15 on page 9
SD
SD
DD
= 80 A, V
= 80 A,
Test conditions
= 25 V, T
GS
J
= 150 °C
= 0
Electrical characteristics
Min.
-
-
-
-
Typ.
160
4.7
70
Max.
392
1.5
98
Unit
nC
ns
A
A
V
A
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