STD9NM60N STMicroelectronics, STD9NM60N Datasheet - Page 7

• Manufacturer Part Number: STD9NM60N
• Description: MOSFET N-CH 600V 6.5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD9NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 452pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10959-2

STD9NM60N, STF9NM60N, STP9NM60N
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
1000
V
100
(V)
(pF)
(A)
12
10
12
10
10
I
GS
C
D
6
0
8
4
2
8
6
4
2
0
1
0
0
0.1
V
Output characteristics
DS
5
5
V
1
GS
10
V
=10V
I
DD
D
10
=6.5A
15
=480V
10
20
15
25
100
6V
20
30
V
GS
5V
Q
V
Doc ID 18063 Rev 1
DS
g
(nC)
AM08165v1
AM08167v1
AM08169v1
(V)
V
400
500
100
0
300
200
Ciss
Coss
DS
Crss
(V)
Figure 9.
Figure 13. Output capacitance stored energy
R
DS(on)
E
0.66
0.65
0.64
0.59
0.63
0.62
0.61
0.60
(µJ)
(A)
(Ω)
12
10
I
oss
1.5
3.5
2.5
0.5
D
6
0
8
4
2
3
2
0
1
0
0
0
Transfer characteristics
100
1
2
V
DS
200
V
2
=20V
GS
4
=10V
300
Electrical characteristics
3
6
400
4
8
500
5
10
600
6
V
GS
I
AM08170v1
(V)
AM08166v1
AM08168v1
V
D
(A)
DS
(V)
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