STD65N55LF3 STMicroelectronics, STD65N55LF3 Datasheet - Page 5
![MOSFET N-CH 55V 80A DPAK](/photos/29/5/290509/dpak_sml.jpg)
STD65N55LF3
Manufacturer Part Number
STD65N55LF3
Description
MOSFET N-CH 55V 80A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STD65N55LF3.pdf
(13 pages)
Specifications of STD65N55LF3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
80 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10877-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD65N55LF3
Manufacturer:
RFMD
Quantity:
3 107
STD65N55LF3
Table 6.
Table 7.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
t
t
I
I
d(on)
d(off)
V
SDM
RRM
I
Q
t
SD
t
t
SD
r
rr
f
rr
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Source drain diode
Parameter
Parameter
Doc ID 16371 Rev 2
(1)
V
R
(see
I
I
di/dt =100 A/µs,
V
(see
SD
SD
DD
G
DD
= 4.7 Ω, V
=65 A, V
=65 A,
= 27 V, I
Test conditions
Test conditions
=30 V, Tj=150 °C
Figure
Figure
15)
GS
D
17)
= 32 A,
GS
=0
=10 V
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
10
25
50
10
40
60
3
Max.
Max.
320
1.5
80
-
-
Unit
Unit
nC
ns
ns
ns
ns
ns
5/13
A
A
V
A