STD5N52K3 STMicroelectronics, STD5N52K3 Datasheet - Page 8

• Manufacturer Part Number: STD5N52K3
• Description: MOSFET N-CH 525V 4.4A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STD5N52K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 545pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10957-2

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
V
V
SD
GS(th)
1.00
0.80
(norm)
1.10
0.70
0.90
0.3
0.2
0.7
(V)
0.9
0.8
0.6
0.4
0.5
0.1
-75
0
0
T
vs temperature
characteristics
J
=-50°C
T
-25
1
J
=150°C
2
25
3
75
I
D
4
=50µA
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
T
125
J
=25°C
5
Doc ID 16952 Rev 2
AM08846v1
T
AM08848v1
I
J
SD
(°C)
(A)
Figure 15. Normalized on resistance vs
Figure 17. Maximum avalanche energy vs
E
R
AS
DS(on)
(norm)
(mJ)
1.5
2.0
1.0
100
2.5
0.5
110
70
60
30
10
90
80
50
40
20
-75
0
0
0
temperature
starting Tj
20
-25
40
25
60
80
75
I
D
100
=4.4A
125
120 140
AM08847v1
AM08849v1
T
J
(°C)
T
J
(°C)