STD35N3LH5 STMicroelectronics, STD35N3LH5 Datasheet - Page 3

• Manufacturer Part Number: STD35N3LH5
• Description: MOSFET N-CH 30V 35A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD35N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 725pF @ 25V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10956-2

STD35N3LH5
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
1. When mounted on 1inch² FR-4 2Oz Cu board
Symbol
R
dv/dt
Symbol
I
R
P
DM
thj-pcb
V
V
E
SD
T
thj-case
I
I
TOT
T
DS
GS
stg
D
D
AS
j
(1)
≤ 30 A, di/dt ≤ 400 A/µs, V
(2)
(1)
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Thermal resistance
Absolute maximum ratings
Thermal resistance junction-case max
Thermal resistance junction-ambient max
DS
Parameter
C
Doc ID 16359 Rev 1
≤ V
Parameter
= 25 °C
GS
(BR)DSS
=0)
, Tj ≤ Tjmax
C
C
= 25 °C
= 100 °C
-55 to 175
Value
Value
TBD
TBD
± 20
0.23
140
4.3
30
35
22
35
50
Electrical ratings
°C/W
°C/W
W/°C
V/ns
Unit
Unit
mJ
°C
W
3/11
V
V
A
A
A