STP8N65M5 STMicroelectronics, STP8N65M5 Datasheet - Page 3

• Manufacturer Part Number: STP8N65M5
• Description: MOSFET N-CH 650V 7A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP8N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 100V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 710V
• On Resistance Rds(on): 0.56ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Power: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 0.56 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 7 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10885-5

STD/F/I/P/U8N65M5
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I
Table 3.
1. When mounted on 1 inch² FR-4 board, 2oz Cu.
R
Symbol
Symbol
R
dv/dt
R
I
thj-pcb
DM
P
V
thj-case
thj-amb
V
E
T
I
SD
I
I
TOT
AR
T
T
ISO
GS
AS
stg
D
D
l
j
(2)
(3)
(1)
≤ 7A, di/dt ≤ 400 A/µs, V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Max current during repetitive or single pulse
avalanche (pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance
junction-case max
Thermal resistance
junction-ambient max
Thermal resistance
junction-pcb max
Maximum lead
temperature for soldering
purpose
Absolute maximum ratings
Thermal data
Parameter
C
j
= 25°C, I
= 25 °C)
Parameter
D
Peak
C
Doc ID 16531 Rev 2
= I
= 25 °C
< V
AR
, V
DPAK IPAK TO-220 I²PAK D²PAK TO-220FP
(BR)DSS.
50
DD
C
C
= 25 °C
= 100 °C
= 50V)
JMAX
100
)
1.79
300
TO-220,
D²PAK
I²PAK
62.5
Value
4.4
28
70
7
-55 to 150
DPAK,
IPAK
Value
± 25
120
150
15
2
30
Electrical ratings
TO-220FP
4.4
28
2500
7
62.5
300
25
5
(1)
(1)
(1)
°C/W
°C/W
°C/W
Unit
Unit
V/ns
mJ
°C
°C
°C
W
V
A
A
A
A
V
3/20