NTMD6N03R2G ON Semiconductor, NTMD6N03R2G Datasheet - Page 3

• Manufacturer Part Number: NTMD6N03R2G
• Description: MOSFET PWR N-CH DL 6A 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD6N03R2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.032 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMD6N03R2GOS; NTMD6N03R2GOS; NTMD6N03R2GOSTR

Final Product/Process Change Notification #16142
ELECTRICAL CHARACTERISTIC SUMMARY:
There is no change in electrical parametric performance. Characterization data is available
upon request.
CHANGED PART IDENTIFICATION:
SO8 Products assembled with the Copper Wire from the ON Semiconductor facility in
Carmona, Philippines will have a Finish Good Date Code representing Work Week 47, 2008
or newer.
Issue Date: 20-Aug-2008
Rev.14 Jun 2007
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