NTMD6N03R2G ON Semiconductor, NTMD6N03R2G Datasheet

NTMD6N03R2G

Manufacturer Part Number

NTMD6N03R2G

Description

MOSFET PWR N-CH DL 6A 30V 8SOIC

Manufacturer

ON Semiconductor

Datasheet

1.NTMD6N03R2.pdf (8 pages)

Specifications of NTMD6N03R2G

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

32 mOhm @ 6A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

950pF @ 24V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Configuration

Dual Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.032 Ohms

Forward Transconductance Gfs (max / Min)

10 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

6 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTMD6N03R2GOS
NTMD6N03R2GOS
NTMD6N03R2GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMD6N03R2G

Manufacturer:

Quantity:

2 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMD6N03R2G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

NTMD6N03R2G

Quantity:

2 500

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NTMD6N03R2

Power MOSFET

30 V, 6 A, Dual N−Channel SOIC−8

Features

•

Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s

2. When surface mounted to an FR4 board using 1″ pad size, t = steady state

MAXIMUM RATINGS

February, 2006 − Rev. 2

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

− Continuous @ T

− Single Pulse (tp ≤ 10 ms)

Total Power Dissipation

@ T

Operating and Storage Temperature

Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

L = 10 mH, R

Thermal Resistance

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes for 10 seconds

Higher Efficiency and Extends Battery Life

Designed for use in low voltage, high speed switching applications

Ultra Low On−Resistance Provides

Miniature SOIC−8 Surface Mount Package Saves Board Space

Diode is Characterized for Use in Bridge Circuits

Diode Exhibits High Speed, with Soft Recovery

Pb−Free Package is Available

DC−DC Converters

Computers

Printers

Cellular and Cordless Phones

Disk Drives and Tape Drives

− R

= 20 Vdc, Peak I

= 30 Vdc, V

= 25°C (Note 1)

= 25°C (Note 2)

DS(on)

= 25 W)

= 0.024 W, V

= 0.030 W, V

Rating

= 25°C

= 5.0 Vdc,

= 25°C

= 9.0 Apk,

= 25°C unless otherwise noted)

= 10 V (Typ)

= 4.5 V (Typ)

Symbol

, T

DSS

qJA

stg

−55 to

Value

+150

"20

1.29

62.5

325

260

6.0

2.0

Watts

°C/W

Volts

Unit

Adc

Apk

°C

†For information on tape and reel specifications,

NTMD6N03R2

NTMD6N03R2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 751

STYLE 11

30 V

(Note: Microdot may be in either location)

SOIC−8

DSS

Device

E6N03 = Specific Device Code

ORDERING INFORMATION

24 mW @ V

http://onsemi.com

= Assembly Location

= Year

= Work Week

= Pb−Free Package

N−Channel

DS(ON)

(Pb−Free)

Package

SOIC−8

MARKING DIAGRAM &

Publication Order Number:

PIN ASSIGNMENT

Typ

= 10 V

D1 D1 D2 D2

S1 G1 S2 G2

AYWW G

2500/Tape & Reel

E6N03

NTMD6N03R2/D

Shipping

6.0 A

Max

†

Related parts for NTMD6N03R2G

NTMD6N03R2G Summary of contents

Page 1

... T −55 to °C J stg +150 E 325 °C/W qJA 62.5 NTMD6N03R2 97 NTMD6N03R2G T 260 °C L †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com V R Typ I Max DSS ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 mA Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc 25° ...

Page 3

TYPICAL MOSFET ELECTRICAL CHARACTERISTICS 0.2 0.4 0.6 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...

Page 6

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E−05 1.0E−04 1.0E− Figure 14. Diode Reverse Recovery Waveform 0.0106 W 0.0431 W CHIP JUNCTION 0.0253 F 0.1406 F 1.0E−02 1.0E−01 ...

Page 8

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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