NTMD6N03R2G ON Semiconductor, NTMD6N03R2G Datasheet - Page 7

• Manufacturer Part Number: NTMD6N03R2G
• Description: MOSFET PWR N-CH DL 6A 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD6N03R2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.032 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMD6N03R2GOS; NTMD6N03R2GOS; NTMD6N03R2GOSTR

0.001
0.01
1.0
0.1
1.0E−05
D = 0.5
0.05
0.02
0.01
0.1
0.2
SINGLE PULSE
1.0E−04
TYPICAL ELECTRICAL CHARACTERISTICS
1.0E−03
Figure 14. Diode Reverse Recovery Waveform
I
S
Figure 13. Thermal Response
t
p
1.0E−02
http://onsemi.com
di/dt
t
a
7
t, TIME (s)
CHIP
JUNCTION
t
rr
1.0E−01
t
b
I
S
0.25 I
S
0.0106 W
0.0253 F
1.0E+00
0.0431 W
0.1406 F
TIME
0.1643 W
0.5064 F
1.0E+01
0.3507 W
2.9468 F
1.0E+02
0.4302 W
177.14 F
AMBIENT
1.0E+03