NTMD6N03R2G ON Semiconductor, NTMD6N03R2G Datasheet - Page 7
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NTMD6N03R2G
Manufacturer Part Number
NTMD6N03R2G
Description
MOSFET PWR N-CH DL 6A 30V 8SOIC
Manufacturer
ON Semiconductor
Datasheet
1.NTMD6N03R2.pdf
(8 pages)
Specifications of NTMD6N03R2G
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
32 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
950pF @ 24V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.032 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTMD6N03R2GOS
NTMD6N03R2GOS
NTMD6N03R2GOSTR
NTMD6N03R2GOS
NTMD6N03R2GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTMD6N03R2G
Manufacturer:
ON
Quantity:
2 500
Part Number:
NTMD6N03R2G
Manufacturer:
ON/安森美
Quantity:
20 000
0.001
0.01
1.0
0.1
1.0E−05
D = 0.5
0.05
0.02
0.01
0.1
0.2
SINGLE PULSE
1.0E−04
TYPICAL ELECTRICAL CHARACTERISTICS
1.0E−03
Figure 14. Diode Reverse Recovery Waveform
I
S
Figure 13. Thermal Response
t
p
1.0E−02
http://onsemi.com
di/dt
t
a
7
t, TIME (s)
CHIP
JUNCTION
t
rr
1.0E−01
t
b
I
S
0.25 I
S
0.0106 W
0.0253 F
1.0E+00
0.0431 W
0.1406 F
TIME
0.1643 W
0.5064 F
1.0E+01
0.3507 W
2.9468 F
1.0E+02
0.4302 W
177.14 F
AMBIENT
1.0E+03