DMS3019SSD-13 Diodes Inc, DMS3019SSD-13 Datasheet - Page 3

• Manufacturer Part Number: DMS3019SSD-13
• Description: MOSFET 2N-CH 30V 7A/5.7A SO8
• Manufacturer: Diodes Inc

Specifications of DMS3019SSD-13

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5.7A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1932pF @ 15V
• Power - Max: 1.19W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Gate Charge Qg: 42 nC
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 1.19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMS3019SSD-13DITR

Electrical Characteristics – Q1
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
Total Gate Charge (V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
25
20
15
10
0
5
0
V , DRAIN-SOURCE VOLTAGE (V)
GS
GS
DS
Fig. 1 Typical Output Characteristic
Characteristic
= 4.5V)
= 10V)
0.5
V
GS
V
GS
= 3.0V
V
GS
= 3.5V
V
GS
= 4.0V
= 4.5V
1
V
GS
= 2.0V
@ T
1.5
A
V
V
= 25°C unless otherwise stated
GS
GS
= 2.5V
= 2.2V
Symbol
R
BV
V
2
DS (ON)
t
t
I
I
C
|Y
V
C
C
GS(th)
Q
Q
D(on)
D(off)
GSS
DSS
R
Q
Q
t
SD
oss
t
DSS
iss
rss
gd
fs
gs
r
f
g
g
g
|
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3 of 10
Min
1.0
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
36.76
30
25
20
15
10
1932
18.1
42.0
6.16
7.22
5.38
Typ
154
121
0.4
2.7
4.5
4.0
5
0
10
12
5
-
-
-
-
0
V
DS
±100
0.5
Max
0.1
2.4
V
Fig. 2 Typical Transfer Characteristic
15
18
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
= 5V
GS
, GATE-SOURCE VOLTAGE (V)
1
Unit
mΩ
mA
nA
pF
nC
Ω
ns
V
V
S
V
V
V
1.5
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
V
R
V
GS
GS
GS
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
DS
DS
GS
G
= 125°C
= 85°C
= 3Ω, R
= 150°C
= 30V, V
= V
= 5V, I
= 15V, V
= 0V, V
= 15V, V
= 15V, V
= 0V, I
= ±12V, V
= 10V, I
= 4.5V, I
= 0V, I
= 10V, V
GS
2
Test Condition
DMS3019SSD
, I
D
D
S
L
GS
D
D
= 1mA
D
= 9A
= 1A
= 1.7Ω
GS
GS
GS
GS
DS
= 250μA
= 9A
DS
= 7A
= 0V, f = 1MHz
= 0V
= 0V,
= 4.5V, I
= 10V, I
= 15V,
2.5
= 0V
V
V
GS
GS
© Diodes Incorporated
= -55°C
= 25°C
October 2010
D
D
= 9A
3
= 9A