NUS6160MNTWG ON Semiconductor, NUS6160MNTWG Datasheet - Page 3

• Manufacturer Part Number: NUS6160MNTWG
• Description: IC OVP LOW PRO W/MOSFET 22-QFN
• Manufacturer: ON Semiconductor

Specifications of NUS6160MNTWG

• Voltage - Working: 1.2 ~ 20V
• Technology: Mixed Technology
• Number Of Circuits: 1
• Applications: General Purpose
• Package / Case: 22-TQFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Voltage - Clamping: -

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 1 oz. copper, double sided board. Thermal impedance requires total for DT calculations. See example in thermal description.
MAXIMUM RATINGS
V
OUT, EN, FLAG Pins Voltage to Ground
Maximum Current from V
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current, Steady State
Pulsed Drain Current, t
Source Current
Operating Ambient Temperature
Storage Temperature
Operating Junction Temperature
Thermal Resistance (Note 1)
1 in
1 in
0.25 in
0.25 in
ESD Performance (Human Body Model) Pins 1, 15, 18, 19, 20
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IN
2
2
to Ground
(645 mm
(645 mm
2
2
(161 mm
(161 mm
OVP FET
FET
FET
OVP FET
FET
FET
OVP FET
FET
FET
OVP FET
FET
FET
2
2
SW
REG
SW
REG
SW
REG
SW
REG
) (All devices fully enhanced)
) (OVP and FET
2)
2
) (OVP and FET
(All devices fully enhanced)
p
(T
= 10 ms
IN
J
to V
= 25°C, unless otherwise stated)
SW
OUT
SW
fully enhanced, 1 V drop across FET
(PMOS)
Rating
fully enhanced, 1 V drop across FET
http://onsemi.com
3
REG
REG
)
)
V
OUT
Symbol
, V
V
T
I
V
V
I
q
max
EN
DSS
DM
T
STG
T
T
I
I
GS
−
JA
D
S
IN
A
J
L
, V
FLAG
−0.3
−0.3
−8.0
Min
−40
−55
68
42
46
43
39
80
79
53
56
53
49
92
Max
−2.0
−4.0
−1.1
600
−20
150
150
260
7.0
8.0
2.5
21
85
°C/W
Unit
mA
°C
°C
°C
kV
°C
V
V
V
V
A
A
A