NUS6160MNTWG ON Semiconductor, NUS6160MNTWG Datasheet

IC OVP LOW PRO W/MOSFET 22-QFN

NUS6160MNTWG

Manufacturer Part Number
NUS6160MNTWG
Description
IC OVP LOW PRO W/MOSFET 22-QFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of NUS6160MNTWG

Voltage - Working
1.2 ~ 20V
Technology
Mixed Technology
Number Of Circuits
1
Applications
General Purpose
Package / Case
22-TQFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Voltage - Clamping
-
NUS6160MN
Low Profile Overvoltage
Protection IC with
Integrated MOSFET
combining an overvoltage protection circuit (OVP) with a dual 20 V
P−channel power MOSFET. The OVP is specifically designed to
protect sensitive electronic circuitry from overvoltage transients and
power supply faults. During such events, the IC quickly disconnects
the input supply from the load, thus protecting it. The integration of
the additional transistor and power MOSFET reduces layout space and
promotes better charging performance.
adapter or a car accessory charger to power a portable product or
recharge its internal batteries.
Features
Benefits
Applications
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 0
This device represents a new level of safety and integration by
The IC is optimized for applications that use an external AC−DC
Overvoltage Turn−Off Time of Less Than 1.5 ms
Undervoltage Lockout Protection; 3.0 V, Nominal
High Accuracy Undervoltage Threshold of 5.0%
−20 V Integrated P−Channel Power MOSFET
Low R
Compact 3.0 x 4.0 mm QFN Package
Maximum Solder Reflow Temperature @ 260°C
This is a Pb−Free Device
Provide Battery Protection
Integrated Solution Offers Cost and Space Savings
Integrated Solution Improves System Reliability
Optimized for Commercial PMUs from Top Suppliers
Portable Computers and PDAs
Cell Phones and Handheld Products
Digital Cameras
DS(on)
= 64 mW @ −4.5 V
NUS6160MNTWG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
Device
CASE 485AT
ORDERING INFORMATION
NUS6160 = Device Code
A
L
Y
W
G
QFN22
1
http://onsemi.com
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Pb−Free)
Package
QFN22
Publication Order Number:
NUS6160MN/D
Tape & Reel
MARKING
DIAGRAM
Shipping
3000 /
ALYWG
NUS
6160
G

Related parts for NUS6160MNTWG

NUS6160MNTWG Summary of contents

Page 1

... G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NUS6160MNTWG QFN22 3000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...

Page 2

Out N/C Gate1 Drain1 FET Drain1 Drain1 Wall Adaptor IN EN NUS6160 18 Figure 2. Typical Charging Solution 18 N/C FET REG SW Drain2 Drain1 11 (Top View) Figure 1. Pinout V bat 15 1 ...

Page 3

MAXIMUM RATINGS (T = 25°C, unless otherwise stated) J Rating V to Ground IN OUT, EN, FLAG Pins Voltage to Ground Maximum Current from (PMOS) IN OUT Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current, Steady State Pulsed ...

Page 4

PIN DESCRIPTION Pin Name 1 Out This pin is the output of the internal OVP chip. It must be connected to the source of the upper FET (Pin 8). 3 Gate FET This pin is the gate of the upper ...

Page 5

OVP ELECTRICAL CHARACTERISTICS (Min/Max limits values (−40°C < T < +85°C) and V A Characteristic Symbol Input Voltage Range Undervoltage Lockout UVLO Threshold Undervoltage Lockout UVLO Hysteresis Overvoltage Lockout Threshold OVLO Overvoltage Lockout Hysteresis OVLO V versus V Dropout V ...

Page 6

MOSFET ELECTRICAL CHARACTERISTICS FET ) REG Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward ...

Page 7

UVLO 0 out t start FLAG 1.2 V Figure 3. Start Up Sequence EN 1 dis V out 0 − DS(on) FLAG Figure 5. Disable ...

Page 8

TYPICAL OPERATING CHARACTERISTICS Figure 9. Startup V = Ch1 Ch3 in out Figure 11. Output Turn Off Time V = Ch1 Ch2 in out Figure 13. Disable Time EN = Ch1 Ch2, FLAG = ...

Page 9

TYPICAL OPERATING CHARACTERISTICS Figure 15. Direct Output Short Circuit 180 160 140 120 100 80 25° Figure 17. Supply Quiescent Current vs. V 450 400 350 300 250 200 150 100 50 0 −50 ...

Page 10

TYPICAL PERFORMANCE CURVES − −2 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 18. On−Region Characteristics 0.2 0.18 ...

Page 11

TYPICAL PERFORMANCE CURVES 1000 900 800 700 600 500 400 300 200 100 C rss −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 23. Capacitance Variation 1000 V = −10 ...

Page 12

Operational Description The NUS6160 provides overvoltage protection for positive voltages P−Channel FET protects the load connected on the V pin, against positive overvoltage out conditions. The Output follows the V BUS threshold is reached. Undervoltage ...

Page 13

... C e 22X 0.52 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

Related keywords