RPI-131 Rohm Semiconductor, RPI-131 Datasheet
RPI-131
Manufacturer Part Number
RPI-131
Description
SENSR OPTO SLOT 1.2MM TRANS THRU
Manufacturer
Rohm Semiconductor
Type
Unamplifiedr
Datasheet
1.RPI-131.pdf
(2 pages)
Specifications of RPI-131
Sensing Distance
0.047" (1.2mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
30mA
Voltage - Collector Emitter Breakdown (max)
30V
Response Time
10µs, 10µs
Mounting Type
Through Hole
Package / Case
PCB Mount
Operating Temperature
-25°C ~ 85°C
Output Collector Emitter Voltage (detector)
30 V
Maximum Reverse Voltage (emitter)
5 V
Maximum Collector Current (detector)
30 mA
Slot Width
1.2 mm
Aperture Width
0.4 mm
Output Device
Phototransistor
Power Dissipation
80 mW
Maximum Fall Time
10 us
Maximum Operating Temperature
+ 85 C
Maximum Rise Time
10 us
Minimum Operating Temperature
- 25 C
Wavelength
800 nm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
511-1339
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RPI-131
Manufacturer:
ROHM Semiconductor
Quantity:
34
Company:
Part Number:
RPI-131NO1
Manufacturer:
ALLEGRO
Quantity:
7 480
RPI-131
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Cut-off frequency
Peak light emitting wavelength
Response time
Maximum sensitivity wavelength
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation
voltage
Response time
100
120
100
80
60
40
20
80
60
40
20
Parameter
0
0
Fig.1 Relative output current vs.
Fig.4 Relative output current vs.
0
0
Parameter
distance ( )
distance (
1
0.5
DISTANCE : d (mm)
DISTANCE : d (mm)
2
3
1
)
4
1.5
Symbol
5
Symbol
V
d
V
V
Topr
I
CE(sat)
tr tf
tr tf
Tstg
CEO
λ
V
I
λ
I
I
f
λ
V
P
P
C1
C2
I
CEO
ECO
I
R
C
F
P
P
P
F
C
R
D
C
6
2
Photointerrupter, Small type
Min.
0.7
0.2
−
−
−
−
−
−
−
−
−
−
−25 to +85
−40 to +100
Limits
Typ.
1.3
800
950
800
10
10
4.5
50
80
30
30
80
−
−
−
−
−
1
5
Fig.5 Power dissipation / collector power
120
100
50
40
30
20
10
80
60
40
20
0
0
−20
−20
dissipation vs. ambient temperature
Max.
1.6
0.5
0.3
10
−
−
−
−
−
−
−
−
Fig.2 Forward current falloff
AMBIENT TEMPERATURE : Ta (°C)
AMBIENT TEMPERATURE : Ta (°C)
P
D
0
0
P
Unit
MHz
nm
mA
mA
nm
µA
µA
µs
nm
µs
C
Unit
mW
mW
V
V
mA
mA
°C
°C
V
V
V
20
20
I
V
V
V
V
I
V
I
∗ Non-coherent Infrared light emitting diode used.
V
∗ This product is not designed to be protected against electromagnetic wave.
F
F
F
=50mA
R
CE
CE
CE
=20mA, I
CC
= 50mA
CC
40
40
=5V
= 5V, I
=10V
=5V, I
=5V, I
=5V, I
60
60
C
F
F
F
= 1mA, R
=20mA
=5mA
C
=20mA, R
=0.3mA
80
80
L
= 100Ω
100
100
L
=100Ω
Conditions
−
−
Optical control equipment
Cameras
Floppy disk drives
1) Ultra-small.
2) Minimal influence from stray light.
3) Low collector-emitter saturation voltage.
Applications
Features
160
140
120
100
50
40
30
20
10
80
60
40
20
0
0
0.2
Fig.3 Forward current vs. forward
Fig.6 Relative output vs. ambient
−40 −20
0.4
AMBIENT TEMPERATURE : Ta (°C)
FORWARD VOLTAGE : V
temperature
voltage
0.6
0.8
0
1.0
20
1.2
40
1.4
60
F
(
V
−25°C
75°C
25°C
50°C
75°C
1.6
)
80
1.8
100
5
4
3
2
1
0
4
2
1
0
3
COLLECTOR TO EMITTER VOLTAGE : V
0
0
External dimensions (Unit : mm)
Fig.10 Output characteristics
Fig.7 Collector current vs.
FORWARD CURRENT : I
10
2
forward current
20
4
30
6
Gap
(3.2)
4.2
1.2
I
F
F
40
=25mA
(mA)
8
20mA
15mA
10mA
5mA
A
A
CE
50
10
(V)
4-0.2
Optical axis center
Fig.11 Response time measurement circuit
t
t
t
d
r
f
:
:
:
1000
100
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
10
Input
1
0.1
COLLECTOR CURRENT : Ic (mA)
Fig.8 Response time vs.
Cross-section A-A
V
CC
R
L
collector current
1
Output
Input
Output
(2.5)
t
d
Anode
Cathode
0.4
10
t
r
R
R
R
4-0.5
L
L
L
=1kΩ
=500Ω
=100Ω
φ 1.5
Ta=25°C
V
CC
=5V
C0.5
Emitter
Collector
t
+0.1
f
Through hole
-0
100
90%
10%
3.2
Notes:
1.
2. Dimension in parenthesis are
1000
shall be ±0.2 .
show for reference.
100
0.1
10
Unspecified tolerance
1
−25
AMBIENT TEMPERATURE : Ta (°C)
Fig.9 Dark current vs.
0
4- φ 0.8
ambient temperature
25
50
V
V
V
R
R
R
75
=10V
=20V
=30V
100
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RPI-131 Summary of contents
Page 1
... RPI-131 Photointerrupter, Small type Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Forward current Reverse voltage Power dissipation Collector-emitter voltage CEO Emitter-collector voltage V 4.5 V ECO Collector current Collector power dissipation −25 to +85 °C Operating temperature Topr −40 to +100 °C Storage temperature Tstg Electrical and optical characteristics (Ta=25° ...
Page 2
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...