IRKT162/16 Vishay, IRKT162/16 Datasheet - Page 3
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IRKT162/16
Manufacturer Part Number
IRKT162/16
Description
SCR DBL HISCR 1600V 160A INTAPAK
Manufacturer
Vishay
Datasheet
1.IRKH13604.pdf
(12 pages)
Specifications of IRKT162/16
Structure
Series Connection - SCR/Diode
Number Of Scrs, Diodes
1 SCR, 1 Diode
Voltage - Off State
1600V
Current - Gate Trigger (igt) (max)
150mA
Current - On State (it (av)) (max)
160A
Current - On State (it (rms)) (max)
355A
Current - Non Rep. Surge 50, 60hz (itsm)
4870A, 5100A
Current - Hold (ih) (max)
200mA
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRKT162/16
VS-IRKT162/16
VS-IRKT162/16
VSIRKT162/16
VSIRKT162/16
VS-IRKT162/16
VS-IRKT162/16
VSIRKT162/16
VSIRKT162/16
www.irf.com
Blocking
Triggering
Thermal and Mechanical Specifications
(The following table shows the increment of thermal resistance R
I
I
V
dV/dt critical rate of rise of off-state voltage
P
P
I
-V
V
I
V
I
di/
T
T
R
R
T
wt
RRM
DRM
GM
GT
GD
R Conduction (per Junction)
INS
J
stg
GM
G(AV)
GT
GD
thJC
thCS
GT
dt
Devices
IRK.136
IRK.142
IRK.162
Maximum peak reverse and
off-state leakage current
RMS isolation voltage
Parameter
Parameter
Max. peak gate power
Max. average gate power
Max. peak gate current
Max. peak negative
gate voltage
Max. required DC gate
voltage to trigger
Max. required DC gate
current to trigger
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Max. rate of rise of
turned-on current
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting
torque ± 10% busbar to IAP
Approximate weight
Case Style
0.0019
0.0030
0.007
180
IAP to heatsink
o
Sinusoidal conduction @ T
0.0019
0.0031
120
0.01
o
IRK.136
IRK.136
0.0020
0.0032
0.013
90
0.18
o
New Int-A-Pak
0.0155
0.0020
0.0033
-40 to 125
-40 to 150
60
IRK.142
IRK.142
200 (7.1)
3500
1000
J
o
4 to 6
4 to 6
270
150
300
0.18
0.05
2.5
1.7
0.3
50
12
10
80
10
max.
3
3
4
thJC
0.0021
0.0034
when devices operate at different conduction angles than DC)
0.017
30
IRK.162
IRK.162
o
V/µs
mA
0.16
V
0.0018
0.0029
0.009
180
o
Units Conditions
Units Conditions
g(oz)
A/µs
K/W
K/W
Rectangular conduction @ T
mA
mA
Nm
T
50Hz, circuit to base, all terminals shorted, t = 1s
T
°C
°C
W
W
A
V
V
V
J
J
= T
= 125
0.0022
0.0036
0.012
120
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
J
DC operation, per junction
tp 5ms, T
f=50Hz, T
tp 5ms, T
T
T
T
T
T
T
@ T
@ T
Mounting surface smooth, flat and greased
Per module
max., exponential to 67% rated V
J
J
J
J
J
J
o
IRK.136, .142, .162 Series
o
= - 40°C
= 25°C
= T
= - 40°C
= 25°C
= T
Bulletin I27117 rev. C 03/02
C
J
J
= T
= T
J
J
max.
max.
J
0.0023
0.0039
J
0.014
max., I
max., rated V
90
J
J
J
= T
= T
= T
o
J
Anode supply = 6V, resistive
load; Ra = 1
Anode supply = 6V, resistive
load; Ra = 1
TM
J
J
max.
max.
max.
= 400A rated V
0.0023
0.0041
0.015
60
o
J
DRM
max.
applied
0.0020
0.0040
0.017
30
DRM
o
DRM
applied
Units
K/W
3