VVZ24-12IO1 IXYS, VVZ24-12IO1 Datasheet - Page 3

• Manufacturer Part Number: VVZ24-12IO1
• Description: RECT BRIDGE 3PH 27A 1200V KAMM
• Manufacturer: IXYS

Specifications of VVZ24-12IO1

• Structure: Bridge, 3-Phase - SCRs/Diodes
• Number Of Scrs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 65mA
• Current - On State (it (av)) (max): 21A
• Current - On State (it (rms)) (max): 16A
• Current - Non Rep. Surge 50, 60hz (itsm): 300A, 320A
• Current - Hold (ih) (max): 100mA
• Mounting Type: Chassis Mount
• Package / Case: KAMM
• Vrrm, (v): 1200
• Vvrms, (v): 400
• Idavm, (a): 21
• @ Th, (°c): 100
• @ Tc, (°c): -
• Ifsm, 10 Ms, Tvj = 45°c, (a): 300
• Vt0, (v): 1
• Rt, (mohms): 16
• Tvjm, (°c): 125
• Rthjc, Per Chip, (k/w): 2.1
• Rthjh, Per Chip, (k/w): 2.7
• Package Style: Kamm-Modul with gate pin G2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Zth
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IXYS reserves the right to change limits, test conditions and dimensions.
JK
K/W
Fig. 1 Surge overload current per chip
3
2
1
0
10
Fig. 5 Transient thermal impedance junction to heatsink
Fig. 4 Power dissipation versus direct output current and ambient temperature
-3
I
FSM
: Crest value, t: duration
10
-2
10
-1
Fig. 2 I
10
0
per chip
2
t versus time (1-10 ms)
10
1
Zth
JK
s
t
10
2
Constants for Z
V
G
0.1
1
2
3
10
V
i
1
1
Fig. 3 Gate trigger characteristics
I
GD
1: I
2: I
3: I
, T
GT
GT
GT
VJ
, T
, T
, T
= 125°C
VJ
VJ
VJ
R
0.17
1.4
1.1
10
Triggering
= 125°C
= 25°C
= -40°C
thi
thJK
(K/W)
1
2
calculation
100
3
VVZ 24
4: P
5: P
6: P
4
I
t
0.028
0.44
2.6
1000
G
i
GAV
GM
GM
(s)
5
=
= 10 W
= 0.5 W
1 W
20110113d
mA
6
3 - 3