VVZ24-16IO1 IXYS, VVZ24-16IO1 Datasheet
VVZ24-16IO1
Manufacturer Part Number
VVZ24-16IO1
Description
RECT BRIDGE 3PH 27A 1600V KAMM
Manufacturer
IXYS
Datasheet
1.VVZ24-12IO1.pdf
(3 pages)
Specifications of VVZ24-16IO1
Structure
Bridge, 3-Phase - SCRs/Diodes
Number Of Scrs, Diodes
3 SCRs, 3 Diodes
Voltage - Off State
1600V
Current - Gate Trigger (igt) (max)
65mA
Current - On State (it (av)) (max)
21A
Current - On State (it (rms)) (max)
16A
Current - Non Rep. Surge 50, 60hz (itsm)
300A, 320A
Current - Hold (ih) (max)
100mA
Mounting Type
Chassis Mount
Package / Case
KAMM
Vrrm, (v)
1600
Vvrms, (v)
500
Idavm, (a)
21
@ Th, (°c)
100
@ Tc, (°c)
-
Ifsm, 10 Ms, Tvj = 45°c, (a)
300
Vt0, (v)
1.00
Rt, (mohms)
16
Tvjm, (°c)
125
Rthjc, Per Chip, (k/w)
2.10
Rthjh, Per Chip, (k/w)
2.70
Package Style
Kamm-Modul with gate pin G2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VVZ24-16IO1
Manufacturer:
IXYS
Quantity:
86
Company:
Part Number:
VVZ24-16IO1
Manufacturer:
IR
Quantity:
300
Three Phase Half Controlled
Rectifier Bridge
Symbol
I
I
I
I
I
(di/dt)
(dv/dt)
V
P
P
T
T
T
V
M
Weight
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
© 2011 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
V
V
dAV
dAVM
FRMS
FSM
2
1300
1700
t
VJ
VJM
stg
RGM
GM
GAVM
ISOL
d
V
RSM
DSM
, I
, I
TSM
TRMS
cr
cr
1200
1600
V
V
RRM
DRM
V
Conditions
T
module
per leg
T
V
T
V
T
V
T
V
T
f =400 Hz, t
V
I
di
T
R
T
I
50/60 Hz, RMS
I
Mounting torque
typ.
G
T
ISOL
K
VJ
VJ
VJ
VJ
VJ
VJ
VJ
R
R
R
R
D
G
GK
= I
= 0.3 A,
/dt = 0.3 A/μs
= 100°C; module
= 2/3 V
= 0
= 0
= 0
= 0
= 45°C;
= T
= 45°C
= T
= T
= T
= T
= ∞; method 1 (linear voltage rise)
≤ 1 mA
TAVM
VJM
VJM
VJM
VJM
VJM
; V
DRM
Type
VVZ 24-12io1
VVZ 24-16io1
P
DR
=200 μs
= 2/3 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
repetitive, I
non repetitive, I
t
t
t
t = 1 min
t = 1 s
(M5)
(10-32 UNF)
p
p
p
DRM
=
= 500 μs
=
30 μs
10 ms
T
= 50 A
T
= 1/3 • I
dAV
Maximum Ratings
2
5
7
4
8
-40...+125
-40...+125
≤
≤
≤
18-22
2-2.5
1000
3000
3600
300
320
270
290
450
430
365
350
150
500
125
0.5
1
21
27
16
10
10
28
5
1
6
lb.in.
A/μs
A/μs
V/μs
Nm
A
A
A
A
3
V~
V~
°C
°C
°C
W
W
W
W
2
2
2
2
A
A
A
A
A
A
A
V
g
s
s
s
s
I
V
Features
Applications
Advantages
dAVM
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Soldering terminals
UL registered E 72873
Input rectifier for switch mode power
supplies (SMPS)
Softstart capacitor charging
Electric drives and auxiliaries
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
RRM
= 27 A
= 1200/1600 V
1
2
5
3
6
4
VVZ 24
7
8
20110113d
1 - 3
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VVZ24-16IO1 Summary of contents
Page 1
... ISOL M Mounting torque (M5) d (10-32 UNF) Weight typ. Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings 300 320 270 ...
Page 2
... R per thyristor (diode); DC current thJH per module d Creeping distance on surface S d Creepage distance in air A a Max. allowable acceleration IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Characteristic Values ≤ VJM ≤ 25°C VJ ≤ ...
Page 3
... Fig. 4 Power dissipation versus direct output current and ambient temperature 3 Zth JK K Fig. 5 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 2 Fig versus time (1-10 ms) per chip Zth ...