VHFD37-08IO1 IXYS, VHFD37-08IO1 Datasheet - Page 3

• Manufacturer Part Number: VHFD37-08IO1
• Description: RECT BRIDGE 1PH 800V V1-A-PAK
• Manufacturer: IXYS

Specifications of VHFD37-08IO1

• Structure: Bridge, Single Phase
• Number Of Scrs, Diodes: 2 SCRs, 4 Diodes
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 65mA
• Current - On State (it (av)) (max): 36A
• Current - Non Rep. Surge 50, 60hz (itsm): 320A, 350A
• Current - Hold (ih) (max): 100mA
• Mounting Type: Chassis Mount
• Package / Case: V1A-PAK
• Vrrm, (v): 800
• Vvrms, (v): 250
• Idavm, (a): 36
• @ Th, (°c): 85
• @ Tc, (°c): -
• Ifsm, 10 Ms, Tvj = 45°c, (a): 320
• Vt0, (v): 0.85
• Rt, (mohms): 13
• Tvjm, (°c): 125
• Rthjc, Per Chip, (k/w): 1.20
• Rthjh, Per Chip, (k/w): 1.55
• Package Style: V1-A-Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - On State (it (rms)) (max): -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Z
I
P
F
thJH
tot
K/W
120
100
2.0
1.5
1.0
0.5
0.0
70
60
50
40
30
20
10
W
80
60
40
20
A
0.001
0
0
0.0
0
Fig. 3 Forward current vs. voltage
Fig. 8 Transient thermal impedance junction to heatsink
Fig. 6 Power dissipation vs. direct output current and ambient temperature
T
T
VJ
VJ
0.5
drop per diode
10
= 125°C
= 25°C
1.0
20
typ.
0.01
V
F
1.5
30
max.
I
V
F(AV)M
2.0
40
A
I
0.1
FSM
300
250
200
150
100
0
A
50
0.001
0
Fig. 4 Surge overload current
50Hz, 80% V
20
40
0.01
60
RRM
1
T
80
VJ
T
= 45°C
amb
0.1
T
100 120 140
VJ
t
t
= 125°C
R
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
s
thHA
s
:
°C
1
10
I
d(AV)M
I
Constants for Z
2
t
1
2
3
4
A
10
10
10
i
50
40
30
20
10
2
A
0
s
3
2
1
1
0
Fig. 5 I
Fig. 7 Max. forward current vs.
V
R
= 0 V
20
R
0.005
0.2
0.875
0.47
T
heatsink temperature
thi
VJ
2
40
t versus time per diode
2
(K/W)
= 45°C
thJH
60
calculation:
VHFD 37
3
80 100 120
T
4 5 6 7 8 9
VJ
T
t
0.008
0.05
0.06
0.25
= 125°C
i
H
(s)
t
20100705a
ms
3 - 3
°C
10