VHFD37-08IO1 IXYS, VHFD37-08IO1 Datasheet
VHFD37-08IO1
Manufacturer Part Number
VHFD37-08IO1
Description
RECT BRIDGE 1PH 800V V1-A-PAK
Manufacturer
IXYS
Datasheet
1.VHFD37-08IO1.pdf
(3 pages)
Specifications of VHFD37-08IO1
Structure
Bridge, Single Phase
Number Of Scrs, Diodes
2 SCRs, 4 Diodes
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
65mA
Current - On State (it (av)) (max)
36A
Current - Non Rep. Surge 50, 60hz (itsm)
320A, 350A
Current - Hold (ih) (max)
100mA
Mounting Type
Chassis Mount
Package / Case
V1A-PAK
Vrrm, (v)
800
Vvrms, (v)
250
Idavm, (a)
36
@ Th, (°c)
85
@ Tc, (°c)
-
Ifsm, 10 Ms, Tvj = 45°c, (a)
320
Vt0, (v)
0.85
Rt, (mohms)
13
Tvjm, (°c)
125
Rthjc, Per Chip, (k/w)
1.20
Rthjh, Per Chip, (k/w)
1.55
Package Style
V1-A-Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - On State (it (rms)) (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VHFD37-08IO1
Manufacturer:
IXYS
Quantity:
125
Half Controlled
Single Phase Rectifier Bridge
Including Freewheeling Diode and Field Diodes
Bridge and Freewheeling Diode
Symbol
I
I
I
I
I
(di/dt)
(dv/dt)
V
P
P
T
T
T
V
d
d
a
M
Weight
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
1700
1300
V
V
dAV
dAVM
FRMS
FSM
2
t
VJ
VJM
stg
S
A
RGM
GM
GAVM
ISOL
900
d
V
RSM
DSM
, I
, I
TSM
TRMS
cr
cr
1600
1200
V
V
800
RRM
DRM
V
Conditions
T
module
per leg
T
V
T
V
T
V
T
V
T
f = 50 Hz, t
V
I
di
T
R
T
I
50/60 Hz, RMS
I
Creep distance on surface
Strike distance in air
Max. allowable acceleration
Mounting torque
G
T
ISOL
H
VJ
VJ
VJ
VJ
VJ
VJ
VJ
R
R
R
R
D
G
GK
= 0.5 I
= 0.3 A,
/dt = 0.3 A/μs
= 85°C, module
= 0 V
= 0 V
= 0 V
= 0 V
= 2/3 V
= 45°C;
= T
= 45°C
= T
= 125°C
= T
= T
= ∞; method 1 (linear voltage rise)
≤ 1 mA
VJM
VJM
(vj)m
VJM
dAVM
Type
VHFD 37-08io1
VHFD 37-12io1
VHFD 37-16io1
; V
DRM
P
= 200 μs
DR
= 2/3 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
repetitive, I
non repetitive, I
t
t
t
(10-32 UNF)
t = 1 min
t = 1 s
(M5)
DRM
p
p
p
=
= 500 μs
=
10 ms
30 μs
T
= 50 A
T
= 0.5 I
dAV
-40...+125
-40...+125
Maximum Ratings
≤
≤
≤
18-22
2-2.5
1000
3000
3600
12.7
320
350
280
310
500
520
390
400
150
500
125
0.5
9.4
36
40
31
10
10
50
35
5
1
m/s
lb.in.
A/μs
A/μs
V/μs
mm
mm
A
A
A
A
Nm
V~
V~
°C
°C
°C
W
W
W
W
A
A
A
A
A
A
A
V
g
2
2
2
2
s
s
s
s
2
V
I
Features
Applications
Advantages
Dimensions in mm (1 mm = 0.0394")
dAVM
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Blocking voltage up to 1600 V
Low forward voltage drop
Leads suitable for PC board soldering
UL registered E 72873
Supply for DC power equipment
DC motor control
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
RRM
1
= 800-1600 V
= 40 A
2
6
3
VHFD 37
8
5
10
20100705a
1 - 3
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VHFD37-08IO1 Summary of contents
Page 1
... Creep distance on surface S d Strike distance in air A a Max. allowable acceleration M Mounting torque d Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Maximum Ratings (50 Hz), sine 320 t = 8.3 ms (60 Hz), sine 350 (50 Hz), sine 280 ...
Page 2
... DC current thJC R per diode; DC current thJH Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. for resistive load IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Characteristic Values ≤ VJM ≤ ...
Page 3
... Fig. 6 Power dissipation vs. direct output current and ambient temperature 2.0 K/W 1.5 Z thJH 1.0 0.5 0.0 0.001 0.01 Fig. 8 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 300 50Hz, 80% V RRM A 250 I FSM T = 45°C VJ ...