VSKT500-12 Vishay, VSKT500-12 Datasheet - Page 2

• Manufacturer Part Number: VSKT500-12
• Description: SCR DBL 2SCR 1200V 500A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKT500-12

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 500A
• Current - On State (it (rms)) (max): 785A
• Current - Non Rep. Surge 50, 60hz (itsm): 17800A, 18700A
• Current - Hold (ih) (max): 500mA
• Mounting Type: Chassis Mount
• Package / Case: SUPER MAGN-A-PAK
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 100 mA
• Holding Current (ih Max): 500 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 18700 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKT500-12; IRKT500-12; IRKT500-12

VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF
Vishay Semiconductors
www.vishay.com
2
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive on-state surge current
Maximum I
Maximum I
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
SWITCHING
PARAMETER
Maximum rate of rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
RMS insulation voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
t for fusing
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
(SUPER MAGN-A-PAK Power Modules), 500 A
SYMBOL
SYMBOL
SYMBOL
V
V
I
dV/dt
Thyristor/Diode and Thyristor/Thyristor
I
T(RMS)
dI/dt
I
I
I
I
V
I
RRM
T(AV),
T(TO)1
T(TO)2
V
V
F(AV)
TSM,
I
DRM
FSM
2
I
r
r
I
t
t
INS
I
2
TM
FM
t1
t2
H
t
L
d
q
t
,
T
t = 1 s
T
180° conduction, half sine wave
180° conduction, half sine wave at T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I
I
I
T
T
Gate current 1 A, dI
V
I
V
pk
pk
TM
J
J
J
J
d
R
= 130 °C, linear to V
= T
= 25 °C, anode supply 12 V resistive load
= T
= 0.67 % V
= 1500 A, T
= 1500 A, T
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 
= 750 A; T
J
J
maximum, I
maximum, rated V
T(AV)
T(AV)
), T
), T
J
DRM
T(AV)
T(AV)
J
J
J
J
= T
= 25 °C, t
= 25 °C, t
= T
= T
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
, T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
J
< I <  x I
< I <  x I
TM
g
J
J
maximum, dI/dt = - 60 A/μs,
J
/dt = 1 A/μs
maximum
maximum
= 25 °C
= 400 A, V
D
= 80 % V
p
p
DRM
RRM
RRM
[e-mail]
= 10 ms sine pulse
= 10 ms sine pulse
T(AV)
T(AV)
/V
RRM
), T
), T
DRM
DRM
Sinusoidal
half wave,
initial T
J
J
applied
C
= T
= T
applied
= 82 °C
J
J
J
maximum
maximum
= T
J
maximum
Document Number: 94420
VALUES
VALUES
VALUES
15 910
1000
1000
3000
1591
1452
1125
1027
1000
17.8
18.7
15.0
15.7
0.85
0.93
0.36
0.32
1.50
1.50
200
100
500
785
500
2.0
Revision: 02-Jul-10
82
UNITS
UNITS
UNITS
kA
kA
A/μs
V/μs
m
mA
mA
kA
°C
μs
V
A
A
V
V
V
2
2
s
s