VSKTF180-12HJ Vishay, VSKTF180-12HJ Datasheet - Page 6

• Manufacturer Part Number: VSKTF180-12HJ
• Description: SCR DBL 2SCR 1200V 180A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKTF180-12HJ

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 180A
• Current - On State (it (rms)) (max): 400A
• Current - Non Rep. Surge 50, 60hz (itsm): 7130A, 7470A
• Current - Hold (ih) (max): 600mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 7470 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKTF180-12HJ; IRKTF180-12HJ; IRKTF180-12HJ

VSK.F180..P Series
Vishay Semiconductors
www.vishay.com
6
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E1
1E1
1E1
1E1
tp
tp
tp
5000
VSK .F1 80.. Se rie s
Tra p ezoid a l p ulse
VSK .F180.. Series
T
T
5 0 0 0
VSK .F180.. Serie s
Sinuso id a l p ulse
T = 85 °C
Tra p ezo id a l p ulse
5 00 0
C
C
C
= 60 °C d i/d t 50A/μs
= 8 5 °C d i/d t 50A/μs
1E2
1E2
1E2
Pulse Ba sewid th (μs)
Pulse Basewidth (μs)
Pulse Base w id th (μs)
2 50 0
[e-mail], [e-mail],
2 50 0
For technical questions within your region, please contact one of the following:
2 50 0
1 0 0 0
1000
1 00 0
40 0
40 0
400
Fast Thyristor/Diode and Thyristor/Thyristor
1E3
1 5 0
1E3
1E3
1 50
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V
1 5 0
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V
s
s
D
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V
(MAGN-A-PAK Power Modules), 180 A
s
s
D
50 H z
= 80% V
s
s
D
= 80% V
50 H z
= 80% V
50 H z
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
D R M
D R M
D R M
1E4
1E4
1E4
1E4
1E4
1E4
[e-mail]
1E1
E1
1E1
1E1
1E1
tp
tp
tp
5 00 0
VSK .F180.. Series
VSK .F 180.. Series
VSK .F 180.. Series
Tra p ezoid a l p ulse
T
Sinusoid a l pulse
Tra p ezoid a l p ulse
T
T = 60 °C
5000
5 00 0
C
C
C
= 85 °C d i/d t 100A/μs
= 60 °C d i/d t 100A/μs
1E2
1E2
1E2
Pulse Basewid th (μs)
Pulse Ba se w idth (μs)
Pulse Base w idth (μs)
2 50 0
2 50 0
2 50 0
1 0 0 0
1000
1 00 0
Document Number: 93685
40 0
400
400
1E3
1E3
1E3
1 5 0
1 5 0
1 5 0
Snub b e r circ uit
R = 10 ohm s
C = 0.47 μF
V
Snub b e r circuit
R = 10 ohm s
C = 0.47 μF
V
Revision: 19-Jul-10
s
s
D
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V = 80% V
s
s
D
= 80% V
s
s
D
50 H z
= 80% V
50 H z
50 H z
D RM
D R M
D RM
1E4
1E4
1E4