VSKTF180-12HJ Vishay, VSKTF180-12HJ Datasheet - Page 3

• Manufacturer Part Number: VSKTF180-12HJ
• Description: SCR DBL 2SCR 1200V 180A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKTF180-12HJ

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 180A
• Current - On State (it (rms)) (max): 400A
• Current - Non Rep. Surge 50, 60hz (itsm): 7130A, 7470A
• Current - Hold (ih) (max): 600mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 7470 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKTF180-12HJ; IRKTF180-12HJ; IRKTF180-12HJ

Document Number: 93685
Revision: 19-Jul-10
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
Maximum recovery time
Maximum turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
RMS insulation voltage
Maximum peak reverse and
off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximuml thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
[e-mail], [e-mail],
MAP to heatsink
For technical questions within your region, please contact one of the following:
Fast Thyristor/Diode and Thyristor/Thyristor
busbar to MAP
(MAGN-A-PAK Power Modules), 180 A
SYMBOL
SYMBOL
SYMBOL
SYMBOL
P
- V
dV/dt
R
R
I
dI/dt
I
P
V
V
T
RRM
V
I
DRM
I
I
G(AV)
GM
T
thCS
GD
thJC
t
t
GT
INS
GM
Stg
GT
GD
rr
q
GM
J
,
DC operation
Mounting surface, flat and greased
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to
allow for the spread of the compound. Use of cable
lugs is not recommended, busbar should be used
and restrained during tightening. Threads must be
lubricated with a compound.
Gate drive 20 V, 20 , t
T
I
I
V
T
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
T
f = 50 Hz, d% = 50
T
T
T
T
TM
TM
J
J
J
J
J
R
J
J
= 125 °C, t
= 25 °C, V
= 125 °C, rated V
= 25 °C
= 125 °C, exponential to 67 % V
= 125 °C, rated V
= 50 V; dV/dt = 400 V/μs linear to 80 % V
= 125 °C, f = 50 Hz, d% = 50
= 750 A; T
= 350 A, dI/dt = - 25 A/μs, V
ak
p
J
 5 ms
12 V, Ra = 6 
= 125 °C; dI/dt = - 25 A/μs;
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
DRM
DRM
[e-mail]
r
/V
applied
 1 ms, V
RRM
applied
R
= 50 V, T
D
DRM
= 80 % V
Vishay Semiconductors
VSK.F180..P Series
J
= 25 °C
DRM
DRM
- 40 to 125
- 40 to 150
(35 to 53)
VALUES
VALUES
VALUES
20
0.125
4 to 6
K
1000
3000
VALUES
0.25
0.02
17.8
200
500
50
60
10
10
20
5
3
MAGN-A-PAK
800
2
www.vishay.com
25
J
(lbf · in)
UNITS
UNITS
UNITS
N · m
V/μs
K/W
mA
mA
mA
oz.
UNITS
°C
W
A
V
V
V
V
g
A/μs
μs
3