P102 Vishay, P102 Datasheet - Page 2

• Manufacturer Part Number: P102
• Description: SCR HY-BRIDGE 600V 25A PACE-PAK
• Manufacturer: Vishay

Specifications of P102

• Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
• Number Of Scrs, Diodes: 2 SCRs, 2 Diodes
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 60mA
• Current - On State (it (rms)) (max): 25A (DC)
• Current - Non Rep. Surge 50, 60hz (itsm): 357A, 375A
• Current - Hold (ih) (max): 130mA
• Mounting Type: Chassis Mount
• Package / Case: 6-PACE-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - On State (it (av)) (max): -
• Lead Free Status / Rohs Status: Details
• Other names: *P102

P100 Series
Vishay High Power Products
www.vishay.com
2
ON-STATE CONDUCTION
PARAMETER
Maximum DC output current
at case temperature
Maximum peak, one-cycle
non-repetitive on-state or
forward current
Maximum I
Maximum I
Maximum value of
threshold voltage
Maximum level value of on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum non-repetitive rate of
rise of turned-on current
Maximum holding current
Maximum latching current
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse
and off-state leakage current
at V
Maximum peak reverse
leakage current
RMS isolation voltage
RRM
, V
DRM
2
2
t for fusing
√t for fusing
SYMBOL
SYMBOL
V
dV/dt
I
V
For technical questions, contact:
I
dI/dt
I
I
I
V
V
RRM
TSM
I
DRM
RRM
FSM
T(TO)
ISOL
I
2
r
I
I
I
2
TM
FM
O
t1
H
√t
L
t
,
,
Passivated Assembled
Circuit Elements, 25 A
Full bridge
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
I
T
T
I
I
T
I
T
T
T
T
T
50 Hz, circuit to base, all terminals shorted,
T
2
TM
FM
TM
J
J
J
J
J
J
J
J
J
t for time tx = I
= 125 °C
= 125 °C, average power = V
= 125 °C from 0.67 V
= 25 °C anode supply = 6 V, resistive load, gate open
= 25 °C anode supply = 6 V, resistive load
= 125 °C, exponential to 0.67 V
= 125 °C, gate open circuit
= 25 °C
= 25 °C, t = 1 s
= π x I
= π x I
= π x I
T(AV)
F(AV)
T(AV)
, I
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
g
2
√t · √tx
= 500 mA, t
TEST CONDITIONS
TEST CONDITIONS
[e-mail]
RRM
RRM
DRM
r
< 0.5 μs, t
T(TO)
Sinusoidal half wave,
initial T
T
J
DRM
= 25 °C
x I
gate open
T(AV)
J
p
= T
> 6 μs
+ r
J
maximum
t
+ (I
T(RMS)
)
2
Document Number: 93754
VALUES
VALUES
6365
2500
0.82
1.35
200
100
357
375
300
315
637
580
450
410
200
130
250
10
25
85
12
Revision: 04-Nov-09
UNITS
UNITS
A
A/μs
V/μs
A
mΩ
mA
mA
°C
μA
2
A
A
V
V
V
2
√s
s