IXFN50N80Q2 IXYS, IXFN50N80Q2 Datasheet - Page 4

• Manufacturer Part Number: IXFN50N80Q2
• Description: MOSFET N-CH 800V 50A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN50N80Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5.5V @ 8mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 13500pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 50 A
• Power Dissipation: 1135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 13500
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1135
• Rthjc, Max, (ºc/w): 0.11
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
160
140
120
100
100
100
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
0.2
2.5
0
f
= 1 MHz
3.0
5
0.4
3.5
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
T
4.0
15
J
Intrinsic Diode
= 125ºC
V
V
V
SD
DS
GS
- Volts
- Volts
- Volts
4.5
0.8
20
T
J
= 125ºC
- 40ºC
5.0
25
25ºC
T
C iss
C oss
C rss
J
1.0
= 25ºC
5.5
30
1.2
6.0
35
6.5
1.4
40
1.000
0.200
0.100
0.010
0.001
100
10
90
80
70
60
50
40
30
20
10
0.00001
9
8
7
6
5
4
3
2
1
0
0
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
Fig. 12. Maximum Transient Thermal Impedance
= 25A
= 10mA
10
= 400V
0.0001
40
20
Fig. 8. Transconductance
30
80
0.001
Fig. 10. Gate Charge
Pulse Width - Seconds
Q
I
40
D
G
- Amperes
- NanoCoulombs
120
0.01
IXFN50N80Q2
50
T
60
160
J
= - 40ºC
125ºC
0.1
25ºC
70
IXYS REF:F_50N80Q2(95)1-18-10-C
200
80
1
90
240
100
10