IXFN50N80Q2 IXYS, IXFN50N80Q2 Datasheet - Page 2

• Manufacturer Part Number: IXFN50N80Q2
• Description: MOSFET N-CH 800V 50A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN50N80Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5.5V @ 8mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 13500pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 50 A
• Power Dissipation: 1135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 13500
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1135
• Rthjc, Max, (ºc/w): 0.11
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
-di/dt = 100A/μs
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= 50A, V
= 25A, V
= 100V
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
GS
GS
DS
D
DS
DS
= 0V, Note 1
= 0V
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
32
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1180
Typ.
0.05
13.5
213
260
120
Typ.
48
26
25
60
13
56
1.1
8.0
0.11 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
200
Max.
300 ns
1.5
50
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B (IXFN) Outline
6,727,585
6,771,478 B2 7,071,537
(M4 screws (4x) supplied)
IXFN50N80Q2
7,005,734 B2
7,063,975 B2
7,157,338B2