IXFN26N120P IXYS, IXFN26N120P Datasheet - Page 4

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IXFN26N120P

Manufacturer Part Number
IXFN26N120P
Description
MOSFET N-CH 1200V 23A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN26N120P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
460 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
225nC @ 10V
Input Capacitance (ciss) @ Vds
14000pF @ 25V
Power - Max
695W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.46 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
23 A
Power Dissipation
695 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
23
Rds(on), Max, Tj=25°c, (?)
0.5
Ciss, Typ, (pf)
14000
Qg, Typ, (nc)
255
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
695
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN26N120P
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
IXFN26N120P
Quantity:
146
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
30
25
20
15
10
80
70
60
50
40
30
20
10
5
0
0
100
10
5.0
0.3
0
0.4
5.5
f = 1 MHz
5
Fig. 9. Forward Voltage Drop of
0.5
6.0
Fig. 7. Input Admittance
10
0.6
Fig. 11. Capacitance
Intrinsic Diode
T
6.5
J
0.7
V
V
15
= 125ºC
V
SD
GS
DS
- Volts
- Volts
T
- Volts
0.8
7.0
J
20
= 125ºC
- 40ºC
25ºC
0.9
7.5
25
C iss
C oss
C rss
1.0
T
J
8.0
30
= 25ºC
1.1
8.5
35
1.2
1.3
9.0
40
1.000
0.100
0.010
0.001
40
35
30
25
20
15
10
0.00001
16
14
12
10
5
0
8
6
4
2
0
0
0
V
I
I
D
G
Fig. 12. Maximum Transient Thermal
DS
40
0.0001
= 13A
= 10mA
5
= 600V
Fig. 8. Transconductance
80
10
Fig. 10. Gate Charge
0.001
Pulse Width - Seconds
Q
G
120
I
- NanoCoulombs
D
Impedance
- Amperes
15
0.01
160
IXFN26N120P
20
T
J
200
IXYS REF: F_26N120P(96) 3-28-08-B
= - 40ºC
0.1
25ºC
125ºC
25
240
1
30
280
10
320
35

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