IXFN26N120P IXYS, IXFN26N120P Datasheet
IXFN26N120P
Specifications of IXFN26N120P
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IXFN26N120P Summary of contents
Page 1
... GS(th ± 30V GSS DSS DS DSS 10V 13A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFN26N120P Maximum Ratings 1200 = 1MΩ 1200 GS ± 30 ± 1.5 ≤ 150° 695 -55 ... +150 150 -55 ... +150 300 t = 1min 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...
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... DSS D 58 225 , I = 13A 87 DSS D 98 0.05 Characteristic Values Min. Typ. JM 1.3 12 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN26N120P Max. SOT-227B Outline Ω 0.18 °C/W °C/W Max 104 A 1.5 V 300 ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...
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... I - Amperes D © 2008 IXYS CORPORATION, All rights reserved V = 10V 10V 13A Value 10V IXFN26N120P Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2.8 2 10V GS 2.4 2.2 2 26A D 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig ...
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... Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. = 125ºC 25ºC - 40ºC 7.5 8.0 8.5 9 25ºC J 0.9 1.0 1.1 1.2 1.3 1.000 C iss 0.100 C oss 0.010 C rss 0.001 IXFN26N120P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 600V 13A ...