IXTN62N50L IXYS, IXTN62N50L Datasheet - Page 4

• Manufacturer Part Number: IXTN62N50L
• Description: MOSFET N-CH 500V 62A SOT-227
• Manufacturer: IXYS

Specifications of IXTN62N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 550nC @ 20V
• Input Capacitance (ciss) @ Vds: 11500pF @ 25V
• Power - Max: 800W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 800 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 62
• Rds(on), Max, Tj=25°c, (?): 0.100
• Ciss, Typ, (pf): 11500
• Qg, Typ, (nc): 550
• Trr, Typ, (ns): 500
• Pd, (w): 800
• Rthjc, Max, (k/w): 0.156
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
250
225
200
175
150
125
100
100
75
50
25
90
80
70
60
50
40
30
20
10
100
0
0
0.5
5
0
T
0.6 0.7
J
6
= 125ºC
f = 1MHz
T
5
J
Fig. 11. Capacitance
Fig. 9. Source Current vs .
Fig. 7. Input Adm ittance
= 125ºC
Source -To-Drain Voltage
7
-40ºC
25ºC
10
0.8 0.9
8
V
V
G S
S D
15
V
T
J
9
D S
- Volts
= 25ºC
- Volts
1
20
- Volts
C iss
C oss
C rss
1 0
1.1
25
1 1
1.2 1.3
1 2
30
1 3
1.4 1.5
35
1 4
40
30
27
24
21
18
15
12
20
18
16
14
12
10
9
6
3
0
8
6
4
2
0
0
0
10
V
I
I
D
G
T
DS
Fig. 8. Trans conductance
J
= 31A
= 10mA
100
= -40ºC
20
125ºC
= 250V
Fig. 10. Gate Charge
25ºC
30
Q
G
200
I
- nanoCoulombs
40
D
- Amperes
50
300
60
IXTN62N50L
70
400
80
90
500
100