IXTN62N50L IXYS, IXTN62N50L Datasheet

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IXTN62N50L

Manufacturer Part Number
IXTN62N50L
Description
MOSFET N-CH 500V 62A SOT-227
Manufacturer
IXYS
Datasheet

Specifications of IXTN62N50L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 20V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
62A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
550nC @ 20V
Input Capacitance (ciss) @ Vds
11500pF @ 25V
Power - Max
800W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
62 A
Power Dissipation
800 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
62
Rds(on), Max, Tj=25°c, (?)
0.100
Ciss, Typ, (pf)
11500
Qg, Typ, (nc)
550
Trr, Typ, (ns)
500
Pd, (w)
800
Rthjc, Max, (k/w)
0.156
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTN62N50L
Manufacturer:
SEMIKRON
Quantity:
1 000
Part Number:
IXTN62N50L
Quantity:
141
© 2007 IXYS CORPORATION, All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
P
T
T
T
V
M
Weight
Symbol
BV
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
DSS
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
Linear Power MOSFET
With Extended FBSOA
N-Channel Enhancement Mode
DS(on)
d
DSS
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
T
50/60 Hz, RMS,
I
Mounting torque for Base Plate
Test Conditions
V
V
V
V
V
V
Note 1
ISOL
Terminal connection torque
J
J
C
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 25°C
≤ 1 mA,
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 20 V, I
GS
DSS
, I
D
D
D
= 1 mA
= 250 μA
= 0.5 I
DS
= 0 V
D25
GS
Preliminary Technical Information
= 1 MΩ
T
T
(T
J
J
J
= 25°C
= 125°C
T = 1 min
T = 1 s
= 25°C, unless otherwise specified)
JM
IXTN62N50L
Min.
500
3
-55 to +150
-55 to +150
Characteristic Values
1.3/11.5
1.5/13
Maximum Ratings
Typ.
2500
3000
150
150
±30
800
500
500
±40
5.0
30
62
62
80
G
S
±200
0.10
Max.
50
5
1
lb.in.
lb.in.
mA
D
S
mJ
V~
V~
nA
μA
°C
°C
°C
V
V
W
Ω
V
V
V
V
A
A
A
g
J
Features
Applications
Advantages
miniBLOC, SOT-227 B (IXTN)
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Designed for linear operation
International standard package
Molding epoxy meets UL94 V-0
flammability classification
miniBLOC with Aluminium nitride
isolation
Programmable loads
Current regulators
DC-DC converters
Battery chargers
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
V
I
R
D25
DS(on)
DSS
E153432
G
≤ ≤ ≤ ≤ ≤
= 500
=
D = Drain
S
0.1
D
62
DS99812(03/07)
S
A
V
Ω Ω Ω Ω Ω

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IXTN62N50L Summary of contents

Page 1

... GSS DSS DS DSS 0.5 I DS(on D25 Note 1 © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTN62N50L G S Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 62 150 5.0 800 -55 to +150 150 -55 to +150 min 2500 3000 1.5/13 1.3/11.5 30 ...

Page 2

... Min. Typ. Max. = 90°C 300 C Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max 100 V 500 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN62N50L SOT-227B (IXTN) Outline Max (M4 screws (4x) supplied °C 176 A 1 6,404,065 B1 6,683,344 ...

Page 3

... 125º 25º 105 120 135 150 IXTN62N50L Fig. 2. Extended Output Characteristics @ 25º 20V GS 18V 16V 14V 12V 10V Volts D S Fig Norm alized to 0.5 I DS(on) vs. Junction Tem perature V = 20V 62A D I -50 ...

Page 4

... S D Fig. 11. Capacitance 100,000 f = 1MHz 10,000 1,000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 1.1 1.2 1.3 1.4 1.5 C iss C oss C rss IXTN62N50L Fig. 8. Trans conductance -40ºC J 25ºC 21 125º Amperes D Fig. 10. Gate Charge 20 V ...

Page 5

... C 1000 T = 150ºC J 25µs 100 100µs 1ms 10 10ms DC 0.1 1000 Fig. 14. Maximum Transient Thermal Impedance 1 10 Pulse Width - milliseconds IXTN62N50L Fig. 13. Forw ard-Bias Safe Operating Area @ T = 90º Limit on DS 100 V - Volts D S 100 IXYS REF: T_62N50L (9N) 4-05-07-A.xls T = 150º ...

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