IXFE180N10 IXYS, IXFE180N10 Datasheet - Page 2

• Manufacturer Part Number: IXFE180N10
• Description: MOSFET N-CH 100V 176A ISOPLUS227
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFE180N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 176A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: 9100pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 176 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 176
• Rds(on), Max, Tj=25°c, (?): 0.008
• Ciss, Typ, (pf): 9100
• Qg, Typ, (nc): 360
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: ISOPLUS227™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
(T
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
Notes:
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
d(off)
S
SM
RM
d(on)
r
f
rr
fs
thJC
thCK
SD
iss
oss
rss
g(on)
gs
gd
RM
J
J
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
1. Pulse width limited by T
2. Pulse test, t
3. I
V
V
Note: I
V
Repetitive;
Note1
I
Note2
DS
GS
F
GS
= 100 A, V
T
Test Conditions
Test Conditions
= 0 V, V
V
R
V
= 90A
= 10 V; I
= 0
I
GS
GS
G
F
T
= 50 A, -di/dt = 100 A/ s, V
= 90 A
= 10 V, V
= 1
= 10 V, V
DS
GS
D
= 25 V, f = 1 MHz
= 60A, Note 2
= 0 V,
(External),
300 ms, duty cycle d
DS
DS
= 0.5 • V
= 0.5 • V
JM.
DSS
DSS
, I
, I
D
D
= I
= I
T
T
R
= 50 V
2 %
Min.
Min.
60
Characteristic Values
Characteristic Values
4,835,592
4,850,072
9100
3200
1600
Typ.
Typ.
0.07
1.1
140
360
190
1 3
90
50
90
65
65
4,881,106
4,931,844
0.25
Max.
250
180
720
Max.
1.5
5,017,508
5,034,796
K/W
K/W
nC
nC
nC
n s
pF
pF
pF
n s
n s
n s
n s
C
S
A
A
V
A
Please see IXFN180N10 data
sheet for characteristic curves.
ISOPLUS-227 B
5,049,961
5,063,307
5,187,117
5,237,481
IXFE 180N10
5,486,715
5,381,025
6,306,728B1