IXFE180N10 IXYS, IXFE180N10 Datasheet
IXFE180N10
Manufacturer Part Number
IXFE180N10
Description
MOSFET N-CH 100V 176A ISOPLUS227
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFE180N10.pdf
(2 pages)
Specifications of IXFE180N10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
176A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
9100pF @ 25V
Power - Max
500W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
176 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
176
Rds(on), Max, Tj=25°c, (?)
0.008
Ciss, Typ, (pf)
9100
Qg, Typ, (nc)
360
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
ISOPLUS227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFET
Single Die MOSFET
Symbol
(T
V
V
I
I
R
Preliminary data sheet
Symbol Test Conditions
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
© 2002 IXYS All rights reserved
GSS
D25
L(RMS)
DM
AR
DSS
J
JM
stg
L
GS(th)
DGR
GS
GSM
AR
AS
D
ISOL
DSS
DS(on)
DSS
d
J
= 25 C, unless otherwise specified)
T
T
V
V
V
V
V
V
Note 2
T
T
Continuous
Transient
Terminal (current limit)
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
S
ISOL
C
C
C
C
GS
DS
GS
DS
GS
GS
J
J
C
J
C
= 25 C
= 0 V, I
= 20V, V
= V
= 0 V
= 25 C
= 10V, I
= 25°C to 150°C
= 25°C to 150°C, R
= 25 C;
= 25 C
= 25 C
= 25 C
= V
Test Conditions
I
150 C, R
DM
1 mA
DSS
GS
, di/dt 100 A/ s, V
, I
D
D
D
= 3mA
= 8mA
= I
GS
TM
Note 1
G
T
= 0V
= 2
t = 1 min
t = 1 s
GS
= 1M
DD
V
DSS
T
T
J
J
= 25 C
= 125 C
Min.
100
IXFE 180N10
2
Characteristic Values
Typ.
-55 ... +150
-55 ... +150
Maximum Ratings
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
2500
3000
100
100
176
100
720
180
300
500
150
Max.
20
30
60
19
100
100
3
5
2
8
4
V/ns
m
mJ
mA
V~
V~
W
nA
A
C
C
C
C
A
A
A
V
V
V
V
V
V
g
J
A
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
•
•
Advantages
•
•
•
V
I
R
t
ISOPLUS 227
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D25
rr
Conforms to SOT-227B outline
Encapsulating epoxy meets
UL 94 V-0, flammability classification
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
DSS
DS(on)
250 ns
DS (on)
= 100
= 176
=
HDMOS
TM
G
(IXFE)
8 m
D = Drain
TM
D
S
process
A
V
98902 (2/02)
S
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IXFE180N10 Summary of contents
Page 1
... GS(th 20V GSS DSS DS DSS 10V DS(on Note 2 © 2002 IXYS All rights reserved IXFE 180N10 Maximum Ratings 100 100 20 30 176 100 720 180 DSS 500 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13Nm/lb.in. 1.5/13Nm/lb.in. 19 Characteristic Values Min. Typ. Max. ...
Page 2
... Notes: 1. Pulse width limited by T JM. 2. Pulse test, t 300 ms, duty cycle 90A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values Min. Typ. Max 9100 3200 ...