IXFN44N80 IXYS, IXFN44N80 Datasheet - Page 4

• Manufacturer Part Number: IXFN44N80
• Description: MOSFET N-CH 800V 44A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN44N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 10000pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 44 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 44
• Rds(on), Max, Tj=25°c, (?): 0.165
• Ciss, Typ, (pf): 10000
• Qg, Typ, (nc): 380
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 694
• Rthjc, Max, (ºc/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
80
60
40
20
1.000
0.100
0.010
0.001
8
6
4
2
0
0
0
0.2
10
-4
V
DS
I
I
0.4
D
G
= 500 V
= 18 A
= 10 mA
100
T
Gate Charge - nC
J
= 125
0.6
V
O
SD
C
200
- Volts
0.8
10
-3
T
1.0
J
= 25
300
O
C
1.2
400
1.4
10
Pulse Width - Seconds
-2
10000
30000
1000
100
0
10
-1
5
Ciss
10
Coss
15
V
DS
- Volts
20
Crss
10
25
0
IXFN 44N80
30
f = 100kHz
35
40
10
1