IXFN44N80 IXYS, IXFN44N80 Datasheet - Page 3

• Manufacturer Part Number: IXFN44N80
• Description: MOSFET N-CH 800V 44A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN44N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 10000pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 44 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 44
• Rds(on), Max, Tj=25°c, (?): 0.165
• Ciss, Typ, (pf): 10000
• Qg, Typ, (nc): 380
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 694
• Rthjc, Max, (ºc/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
2.4
2.0
1.6
1.2
0.8
90
75
60
45
30
15
50
40
30
20
10
0
0
-50
0
0
T
J
= 25
V
-25
GS
O
= 10V
C
20
5
0
T
T
J
J
V
= 125
= 25
T
GS
I
D
25
C
V
= 9V
- Amperes
- Degrees C
DS
O
O
C
8V
7V
6V
C
- Volts
10
40
50
75
100 125 150
15
60
5V
4V
20
80
60
50
40
30
20
10
60
45
30
15
0
3.5
0
2.5
2.2
1.9
1.6
1.3
1.0
0
25
V
GS
T
= 10V
J
= 125
4.0
50
5
I
O
D
T
C
= 44A
J
= 125
V
T
V
GS
J
DS
75
o
- Degrees C
C
4.5
- Volts
- Volts
10
V
GS
= 9V
100
IXFN44N80
8V
7V
6V
5.0
I
D
15
= 22A
T
J
125
= 25
5V
4V
o
C
5.5
20
150