STE45NK80ZD STMicroelectronics, STE45NK80ZD Datasheet - Page 3

• Manufacturer Part Number: STE45NK80ZD
• Description: MOSFET N-CH 800V 45A ISOTOP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STE45NK80ZD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 4.5V @ 150µA
• Gate Charge (qg) @ Vgs: 781nC @ 10V
• Input Capacitance (ciss) @ Vds: 26000pF @ 25V
• Power - Max: 600W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5387-5; STE45NK80ZD

STE45NK80ZD
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2. I
Table 2.
Table 3.
V
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb
Symbol
Symbol
dv/dt
ESD(G-S)
I
V
P
P
DM
V
Tstg
SD
V
V
E
I
DGR
AR
I
I
TOT
TOT
T
ISO
DS
GS
AS
D
D
j
≤ 45A, di/dt £ 500 A/µs, V
(1)
(2)
Thermal Resistance Junction-ambient Max
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain Current (continuous) at T
(Steady State)
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating factor
Gate source ESD(HBM-C=100pF, R=1.5kW)
Peak diode recovery voltage slope
Insulation withstand voltage (AC-RMS) from all
four terminals to external heatsink
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
j
= 25 °C, I
DD
Parameter
Parameter
≤ V
D
(BR)DSS
C
GS
= I
= 25°C (steady state)
GS
j
= 20 kW)
max)
AR
= 0)
.
, V
DD
C
C
= 25°C
= 100°C
= 35 V)
- 65 to 150
Value
Value
2500
± 30
800
800
180
600
0.2
1.2
45
28
40
45
5
7
8
Electrical ratings
W/°C
°C/W
°C/W
Unit
V/ns
Unit
KV
°C
W
V
V
V
A
A
A
A
V
A
J
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