STE70NM50 STMicroelectronics, STE70NM50 Datasheet - Page 2
![MOSFET N-CH 500V 70A ISOTOP](/photos/14/28/142806/isotop_sml.jpg)
STE70NM50
Manufacturer Part Number
STE70NM50
Description
MOSFET N-CH 500V 70A ISOTOP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STE70NM50.pdf
(8 pages)
Specifications of STE70NM50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
266nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohms
Forward Transconductance Gfs (max / Min)
35 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
70 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
30A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3172-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STE70NM50
Quantity:
215
STE70NM50
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2/8
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
I
I
C
DS(on)
C
E
GS(th)
C
fs
I
GSS
DSS
R
AR
T
oss
AS
rss
iss
G
(1)
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
CASE
DD
I
V
V
V
V
V
V
I
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
D
D
V
= 35 V)
DS
DS
GS
DS
GS
DS
DS
= 250 µA, V
= 30A
= 25 °C UNLESS OTHERWISE SPECIFIED)
= Max Rating
= Max Rating, T
= V
> I
= ± 20V
= 10V, I
= 25V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
x R
D
= 30A
GS
= 250µA
DS(on)max,
Max
Max
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
500
3
300
0.2
30
Max Value
0.045
7500
Typ.
Typ.
Typ.
1.4
980
200
1.5
30
35
4
Max.
Max.
Max.
± 10
0.05
100
10
5
°C/W
°C/W
Unit
Unit
Unit
Unit
µA
µA
µA
°C
pF
pF
pF
A
V
V
S
J