IXFN360N15T2 IXYS, IXFN360N15T2 Datasheet - Page 5

MOSFET N-CH 150V 310A SOT227

IXFN360N15T2

Manufacturer Part Number
IXFN360N15T2
Description
MOSFET N-CH 150V 310A SOT227
Manufacturer
IXYS
Series
GigaMOS™r
Type
GigaMOS Trench T2 HiperFetr
Datasheet

Specifications of IXFN360N15T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
310A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
715nC @ 10V
Input Capacitance (ciss) @ Vds
47500pF @ 25V
Power - Max
1070W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Product
MOSFET Gate Drivers
Rise Time
170 ns
Fall Time
265 ns
Supply Current
100 A
Maximum Power Dissipation
1070 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
115 ns
Maximum Turn-on Delay Time
50 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
310 A
Output Voltage
150 V
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
310
Rds(on), Max, Tj=25°c, (?)
0.004
Ciss, Typ, (pf)
47500
Qg, Typ, (nc)
715
Pd, (w)
1070
Rthjc, Max, (k/w)
0.14
Package Style
SOT227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN360N15T2
Manufacturer:
CUI
Quantity:
23 000
© 2009 IXYS CORPORATION, All Rights Reserved
700
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100
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340
300
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100
0
0
40
25
1
T
V
t
J
R
V
r
DS
DS
= 125ºC, V
G
35
2
60
= 75V
= 1Ω , V
= 75V
Switching Times vs. Gate Resistance
Switching Times vs. Drain Current
Rise Time vs. Junction Temperature
45
3
GS
80
t
GS
d(on)
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
= 10V
= 10V
Fig. 13. Resistive Turn-on
55
- - - -
4
T
100
J
T
I
= 25ºC
J
R
D
- Degrees Centigrade
G
= 100A
I
65
D
- Ohms
5
- Amperes
I
120
D
T
= 200A
J
75
= 125ºC
6
140
R
V
t
f
85
G
DS
7
= 1Ω, V
= 75V
I
I
D
D
= 100A
= 200A
160
95
GS
8
= 10V
t
d(off)
105
180
9
- - - -
115
200
10
210
180
150
120
90
60
30
0
240
220
200
180
160
140
120
100
125
900
800
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600
500
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300
200
100
700
600
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300
260
220
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140
100
60
0
25
1
40
T
V
t
R
V
t
f
J
DS
R
V
f
DS
G
Switching Times vs. Junction Temperature
35
= 125ºC, V
G
DS
2
= 1Ω, V
= 75V
= 1Ω , V
= 75V
60
= 75V
Switching Times vs. Gate Resistance
45
I
D
3
GS
= 200A
GS
GS
t
T
Fig. 16. Resistive Turn-off
d(off)
= 10V
80
t
Fig. 18. Resistive Turn-off
J
d(off)
= 10V
= 10V
= 25ºC
55
Rise Time vs. Drain Current
I
Fig. 14. Resistive Turn-on
D
- - - -
T
4
= 200A, 100A
- - - -
J
- Degrees Centigrade
65
100
I
R
D
T
5
G
J
- Amperes
= 125ºC
- Ohms
75
IXFN360N15T2
120
6
I
85
D
= 100A
140
7
95
8
105
160
115
9
180
125
10
220
200
180
160
140
120
100
80
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400
300
200
100
200

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