IXFN360N15T2 IXYS, IXFN360N15T2 Datasheet - Page 2

• Manufacturer Part Number: IXFN360N15T2
• Description: MOSFET N-CH 150V 310A SOT227
• Manufacturer: IXYS
• Series: GigaMOS™r
• Type: GigaMOS Trench T2 HiperFetr

Specifications of IXFN360N15T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 310A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 715nC @ 10V
• Input Capacitance (ciss) @ Vds: 47500pF @ 25V
• Power - Max: 1070W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: MOSFET Gate Drivers
• Rise Time: 170 ns
• Fall Time: 265 ns
• Supply Current: 100 A
• Maximum Power Dissipation: 1070 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 115 ns
• Maximum Turn-on Delay Time: 50 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 310 A
• Output Voltage: 150 V
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 310
• Rds(on), Max, Tj=25°c, (?): 0.004
• Ciss, Typ, (pf): 47500
• Qg, Typ, (nc): 715
• Pd, (w): 1070
• Rthjc, Max, (k/w): 0.14
• Package Style: SOT227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
-di/dt = 100A/μs
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= 60A, V
= 160A, V
= 60V
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
GS
DS
D
GS
DS
DS
= 0V, Note 1
= 60A, Note 1
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 100A
= 180A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
140
Min.
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
3060
Typ.
0.05
47.5
230
665
170
115
265
715
185
200
Typ.
0.50
9.00
50
0.14 °C/W
Max.
1440
6,404,065 B1
6,534,343
6,583,505
Max.
360
150 ns
1.2
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B (IXFN) Outline
6,727,585
6,771,478 B2 7,071,537
IXFN360N15T2
(M4 screws (4x) supplied)
7,005,734 B2
7,063,975 B2
7,157,338B2