MUBW50-12E8 IXYS, MUBW50-12E8 Datasheet - Page 8

• Manufacturer Part Number: MUBW50-12E8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-12E8

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 90A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 3.8nF @ 25V
• Power - Max: 350W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 90A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 140
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 0.94
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 90
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 62
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.35
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 35
• Rthjc, Typ, Br Chopper, (k/w): 0.55
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

© 2007 IXYS All rights reserved
Brake Chopper T7 / D7
E
Z
I
0.0001
off
C
thJC
0.001
0.01
K/W
0.1
0.00001 0.0001 0.001
80
60
40
20
mJ
10
A
6
4
2
0
0
1
0
0
Fig. 19 Typ. output characteristics
Fig. 21 Typ. turn off energy and switching
Fig. 23 Typ. transient thermal impedance
V
V
R
T
E
CE
GE
VJ
G
off
= 600 V
= ±15 V
= 39 Ω
= 125°C
1
single pulse
times versus collector current
20
2
T
0.01
VJ
40
= 25°C
3
V
0.1
T
CE
I
C
VJ
= 125°C
60
t
V
4
GE
1
= 15 V
t
d(off)
diode
t
IGBT
V
A
f
s
80
10
5
1200
1000
800
600
400
200
0
ns
t
R
E
10000
off
I
1000
F
120
100
100
Ω
mJ
A
80
60
40
20
4
3
2
1
0
0
10
Fig. 20 Typ. forward characteristics of
Fig. 22 Typ. turn off energy and switching
Fig. 24 Typ. thermistorresistance versus
0
0
E
V
V
I
T
C
VJ
CE
GE
off
= 600 V
= ±15 V
= 35 A
= 125°C
20
25
1
Temperature Sensor NTC
free wheeling diode
times versus gate resistor
temperature
30
50
2
40
MUBW 50-12 E8
75
T
T
50
VJ
VJ
3
= 125°C
= 25°C
V
100
F
60
T
R
4
125
G
70
MUBW5012E8
V
C
t
d(off)
Ω
t
20070912a
f
150
80
5
8 - 8
800
600
400
200
0
ns