GB35XF120K Vishay, GB35XF120K Datasheet - Page 7

• Manufacturer Part Number: GB35XF120K
• Description: MODULE IGBT 1200V 35A ECONO2 6PK
• Manufacturer: Vishay

Specifications of GB35XF120K

• Igbt Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 3.475nF @ 30V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ECONO2
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 50 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 93651
Revision: 01-Sep-08
查询"GB35XF120K"供应商
0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
1
1
1E-6
1E-6
D = 0.50
D = 0.50
0.01
0.02
0.10
0.05
0.01
0.02
0.20
0.10
0.05
0.20
Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (DIODE)
Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
SINGLE PULSE
( THERMAL RESPONSE )
SINGLE PULSE
( THERMAL RESPONSE )
1E-5
1E-5
For technical questions, contact: [e-mail]
IGBT Sixpack Module, 35 A
1E-4
1E-4
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
1E-3
1E-3
τ
J
τ
τ
J
J
τ
τ
1
Ci= τi/Ri
τ
J
τ
1
Ci= i/Ri
1
Ci= τi/Ri
τ
1
Ci
R
1
i/Ri
R
R
1
1
R
1
τ
2
R
τ
1E-2
1E-2
τ
2
2
2
R
τ
R
2
2
2
R
2
Vishay High Power Products
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
3
3
C
R
τ
τ
3
3
τ
C
τ
Ri (°C/W)
Ri (°C/W)
0.086
0.354
0.049
0.154
0.597
1E-1
1E-1
0.00006
0.00077
0.039382
0.000561
0.038148
τi (sec)
τi (sec)
GB35XF120K
1E+0
1E+0
www.vishay.com
7