GB35XF120K Vishay, GB35XF120K Datasheet - Page 2

• Manufacturer Part Number: GB35XF120K
• Description: MODULE IGBT 1200V 35A ECONO2 6PK
• Manufacturer: Vishay

Specifications of GB35XF120K

• Igbt Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 3.475nF @ 30V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ECONO2
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 50 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

GB35XF120K
Vishay High Power Products
Note
(1)
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Temperature coefficient of breakdown voltage ΔV
Collector to emitter voltage
Gate threshold voltage
Threshold voltage temperature coefficient
Zero gate voltage collector current
Diode forward voltage drop
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
Short circuit safe operating area
Diode peak reverse recovery current
查询"GB35XF120K"供应商
Energy losses include “tail” and diode reverse recovery
For technical questions, contact: [e-mail]
ΔV
IGBT Sixpack Module, 35 A
SYMBOL
SYMBOL
(BR)CES
RBSOA
SCSOA
BV
J
V
V
GE(th)
t
t
d(OFF)
CE(ON)
Q
C
I
V
I
Q
d(ON)
C
= 25 °C unless otherwise specified)
J
C
GE(th)
E
E
E
E
E
E
GES
Q
CES
(CES)
I
FM
t
t
oes
GE
GC
res
on
off
tot
on
off
tot
ies
rr
= 25 °C unless otherwise specified)
r
G
f
/ΔT
/ΔT
J
J
I
V
V
I
V
T
I
V
T
I
V
T
V
V
f = 1 MHz
T
R
T
V
R
T
V
V
V
V
I
I
I
I
V
V
V
V
I
I
I
I
V
C
C
C
C
F
F
F
F
C
C
C
C
J
J
J
J
J
J
CC
GE
GE
GE
GE
GE
CC
CC
CC
GE
GE
GE
CE
CE
GE
GE
GE
G
G
= 35 A
= 50 A
= 35 A, T
= 50 A, T
= 35 A, V
= 50 A, V
= 35 A, V
= 50 A, V
= 35 A
= 35 A, V
= 35 A, V
= 35 A, V
= 25 °C
= 125 °C
= 125 °C
= 150 °C, I
= 150 °C
= 125 °C
= 10 Ω, V
= 10 Ω, V
= V
= 600 V
= 15 V
= 15 V, R
= 15 V, R
= 15 V, R
= 0 V
= 30 V
= 900 V, V
= 600 V, I
= 15 V, R
= 0 V, I
= 0 V, I
= V
= 0 V, V
= 0 V, V
= ± 20 V
GE
GE
TEST CONDITIONS
TEST CONDITIONS
, I
, I
(1)
J
J
C
C
GE
GE
GE
GE
CC
CC
CC
C
C
(1)
CE
CE
= 125 °C
= 125 °C
GE
GE
C
= 500 µA
= 1 mA (25 °C to 125 °C)
G
G
G
G
= 250 µA
= 1 mA (25 °C to 125 °C)
F
= 600 V
= 600 V
= 600 V
= 15 V
= 15 V
= 15 V, T
= 15 V, T
P
= 100 A
= 1200 V
= 1200 V, T
= 35 A, L = 400 µH
= 10 Ω, L = 400 µH
= 10 Ω, L = 400 µH
= 10 Ω, L = 400 µH
= 10 Ω
= 15 V to 0 V
= 15 V to 0 V
= 1200 V
J
J
= 125 °C
= 125 °C
J
= 125 °C
MIN.
1200
MIN.
4.0
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
Document Number: 93651
TYP.
TYP.
3475
2.40
2.75
2.80
3.30
5.25
1.90
2.15
2.00
2.35
2.70
2.50
5.20
3.75
3.68
7.43
- 11
500
255
125
415
230
615
0.7
25
50
35
90
73
-
-
-
-
Revision: 01-Sep-08
MAX.
± 200
MAX.
10.55
2.60
3.00
2.35
2.65
4.08
3.78
7.85
5.45
5.10
100
385
560
300
6.0
40
90
65
50
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
mV/°C
UNITS
V/°C
µA
nA
nC
mJ
pF
ns
µs
V
V
V
A