GA75TS120U Vishay, GA75TS120U Datasheet - Page 5

• Manufacturer Part Number: GA75TS120U
• Description: IGBT FAST 1200V 75A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA75TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 12.815nF @ 30V
• Power - Max: 390W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

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Fig. 9 - Typical Switching Losses vs. Gate
25000
20000
15000
10000
45
40
35
30
25
5000
10
0

T
Fig. 7 - Typical Capacitance vs.
V
V
T
I
J
C
C
1
CC
GE
Collector-to-Emitter Voltage
= 125°C
= 720V
= 15V
= 25
= 75A
R
V
G
CE
20
°
C
, Gate Resistance (Ohm)

V
C
C
C
Resistance
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
=
=
=
=
0V,
C
C
C
ge
gc
ce
30
+ C
+ C
10
f = 1MHz
gc ,
gc
C
( Ω )
ce
40
SHORTED
100
50
100
10
1
20
15
10
-60 -40 -20
Fig. 10 - Typical Switching Losses vs.
5
0

R
R
V
V
0

G1
GE
CC
V
Fig. 8 - Typical Gate Charge vs.
G
I
CC
C
=15
= 15V
= 720V
= 15Ohm
= 400V
= 75A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Ω
Junction Temperature
85 A
J
Q , Total Gate Charge (nC)
;R
G
G2
0
GA75TS120U
= 0
200
20 40 60 80 100 120 140 160
Ω
400

I =

I =

I =
C
C
C
= 37A
°
37.5
150
75
A
A
A
5
600