GA75TS120U Vishay, GA75TS120U Datasheet - Page 4

• Manufacturer Part Number: GA75TS120U
• Description: IGBT FAST 1200V 75A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA75TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 12.815nF @ 30V
• Power - Max: 390W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA75TS120U
Fig. 4 - Maximum Collector Current vs. Case
4
0 . 0 1
80
60
40
20
0.1
0
0 . 0 0 0 1
1
25
D = 0 .50
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0 .01
0.2 0
0 .1 0
0.05
0 .02
50
T , Case Temperature ( C)
C
Temperature
0 . 0 0 1
(TH ER M AL RE SP O N S E)
SING LE PU LS E
75
100
0 . 0 1
t , R e ctan gula r Pulse D uratio n (se c)
1
125
°
150
0.1
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
1
-60 -40 -20

V
80 us PULSE WIDTH
vs. Junction Temperature
GE
= 15V
Notes:
1. Duty factor D = t / t
2. Peak T = P
T , Junction Temperature ( C)
J
0
1 0
J
20 40 60 80 100 120 140 160
DM
x Z
1
thJC
2
P
DM
1 0 0
+ T
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I =

I =

I =
C
C
C
C
t
1
= 37A
37.5
t 2
150
75
A
A
A
°
1 0 0 0
A