GA600GD25S Vishay, GA600GD25S Datasheet - Page 5

• Manufacturer Part Number: GA600GD25S
• Description: IGBT FAST 250V 600A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA600GD25S

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce(on) (max) @ Vge, Ic: 1.4V @ 15V, 600A
• Current - Collector (ic) (max): 600A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 86.063nF @ 30V
• Power - Max: 1920W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

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Fig. 9 - Typical Switching Losses vs. Gate
160000
120000
80000
40000
150
140
130
120
110
0
0
Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 150V
= 15V
= 25
= 600A
R
V
10
G
CE
°
, Gate Resistance
C
V
C
C
C
Resistance
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
C ies
C oes
C res
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
( Ω )
SHORTED
40
50
100
1000
100
10
20
16
12
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60
0
R
V
V
V
I
Fig. 8 - Typical Gate Charge vs.
G
GE
CC
CC
C
-40
= 15V
= 150V
= 15 Ω; R
= 400V
= 600A
Gate-to-Emitter Voltage
-20
250V
200V
Junction Temperature
T , Junction Temperature (°C)
Q , Total Gate Charge (nC)
J
1000
G
0
G2
20
= 0 Ω
40
2000
60
80
3000
100 120 140 160
I = 1000A
I = 600A
I = 300A
C
C
C
4000
5
A