GA600GD25S Vishay, GA600GD25S Datasheet

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GA600GD25S

Manufacturer Part Number
GA600GD25S
Description
IGBT FAST 250V 600A INT-A-PAK
Manufacturer
Vishay
Datasheet

Specifications of GA600GD25S

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
250V
Vce(on) (max) @ Vge, Ic
1.4V @ 15V, 600A
Current - Collector (ic) (max)
600A
Current - Collector Cutoff (max)
2mA
Input Capacitance (cies) @ Vce
86.063nF @ 30V
Power - Max
1920W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

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• Standard speed, optimized for battery powered
• Very low conduction losses
• HEXFRED
• Industry standard package
• UL recognition pending
• Internal thermistor
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
SINGLE SWITCH IGBT DUAL INT-A-PAK
Thermal / Mechanical Characteristics
www.irf.com
V
I
I
I
I
V
V
P
P
T
T
R
R
R
SMPS, Welding
recovery
C
CM
LM
FM
STG
application
CES
GE
ISOL
D
D
J
θJC
θJC
θCS
@ T
@ T
@ T
C
C
C
= 25°C
= 25°C
= 85°C
TM
antiparallel diodes with ultra-soft
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2
Mounting Torque, Case-to-Terminal 3,4,5,6
Weight of Module
Parameter
Parameter
ƒ
ƒ
-40 to +150
-40 to +125
Standard
Max.
1200
1200
1200
2500
1920
1000
±17
250
600
Typ.
0.04
365
@V
V
GE
CE
V
TM
CES
(on) typ.
=
Speed IGBT
15V
Max.
0.065
0.20
6.0
5.0
1.5
=
PD - 50071C
,
250
I
= 1.25V
C
=
V
600A
08/27/02
Units
Units
°C/W
N m
°C
W
V
A
V
.
g
1

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GA600GD25S Summary of contents

Page 1

SINGLE SWITCH IGBT DUAL INT-A-PAK • Standard speed, optimized for battery powered application • Very low conduction losses TM • HEXFRED antiparallel diodes with ultra-soft recovery • Industry standard package • UL recognition pending • Internal thermistor Benefits • Increased ...

Page 2

Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Collector-to-Emitter Leaking Current CES V Diode Forward ...

Page 3

Square wave: 60% of rated voltage 200 I 100 Ideal diodes 0 0.1 Fig Typical Load Current vs. Frequency 10000 1000 ° 125 C J 100 ° ...

Page 4

T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0 0.50 0.20 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.0001 ...

Page 5

1MHz ies res oes ce gc 120000 C ies 80000 C oes 40000 C res 0 ...

Page 6

125 C ° 150V 15V GE 240 160 200 400 600 800 I , Collector Current (A) C Fig Typical Switching ...

Page 7

V = 150V 125° 25°C J 280 300 400 500 di /dt - (A/µs) f Fig Typical Reverse Recovery vs. di www.irf.com 120 I = 1000A F I ...

Page 8

Fig. 17a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90% Ic ...

Page 9

Figure 17e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 18. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...

Page 10

Notes:  Repetitive rating 17V, pulse width limited by GE max. junction temperature. ‚ See fig. 17 ƒ For screws M6. „ Pulse width 50µs; single shot. Case Outline — DUAL INT-A-PAK x IR WORLD HEADQUARTERS: 233 Kansas ...

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