GA250TS60U Vishay, GA250TS60U Datasheet - Page 5

• Manufacturer Part Number: GA250TS60U
• Description: IGBT FAST 600V 250A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA250TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 250A
• Current - Collector (ic) (max): 250A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 23.4nF @ 30V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: VS-GA250TS60U; VS-GA250TS60U; VSGA250TS60U; VSGA250TS60U

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Fig. 9 - Typical Switching Losses vs. Gate
42000
36000
30000
24000
18000
12000
6000
45
40
35
30
25
20
0
0

Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 360V
= 25 C
= 15V
= 250A
125°
R
V
G
CE
°
10

V
C
C
C
, Gate Resistance (Ohm)
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
=
=
=
=
0V,
C
C
C

C
C
C
ge
gc
ce
ies

oes

res
20
+ C
+ C
10
f = 1MHz
gc ,
gc
C
ce
30
SHORTED
100
40
100
10
20
16
12
1
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
8
4
0

0
R
R
V
V

V
GE
CC
Fig. 8 - Typical Gate Charge vs.
I
G1
G
CC
C
=15 ;R
= 15Ohm
= 15V
= 360V
= 400V
= 250A
200
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
J
Q , Total Gate Charge (nC)
G
G2
0
GA250TS60U
400
= 0
20
40
600
60
80 100 120 140 160
800

I =

I =

I =
C
C
C
°
1000
62.5
250
125
A
A
A
1200
5