GA250TS60U Vishay, GA250TS60U Datasheet

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GA250TS60U

Manufacturer Part Number
GA250TS60U
Description
IGBT FAST 600V 250A INT-A-PAK
Manufacturer
Vishay
Datasheet

Specifications of GA250TS60U

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 250A
Current - Collector (ic) (max)
250A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
23.4nF @ 30V
Power - Max
780W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Not Compliant
Other names
VS-GA250TS60U
VS-GA250TS60U
VSGA250TS60U
VSGA250TS60U

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
SanRex
Quantity:
1 000
Part Number:
GA250TS60U
Quantity:
59
Part Number:
GA250TS60U
Quantity:
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• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
• Very low conduction and switching losses
• HEXFRED
• Industry standard package
• UL approved
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
"HALF-BRIDGE" IGBT INT-A-PAK
Benefits
Features
Thermal / Mechanical Characteristics
www.irf.com
V
I
I
I
I
V
V
P
P
T
T
R
R
R
SMPS, Welding
kHz in resonant mode
recovery
C
CM
LM
FM
frequencies 8-40 kHz in hard switching, >200
CES
GE
ISOL
D
D
J
STG
@ T
CS
JC
JC
@ T
@ T
C
C
C
= 25°C
= 25°C
= 85°C
antiparallel diodes with ultra- soft
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
Parameter
Parameter
S
T
GA250TS60U
-40 to +150
-40 to +125
Ultra-Fast
Max.
2500
600
250
500
500
500
±20
780
400
Typ.
200
0.1
@V
V
GE
CE
V
TM
CES
=
(on) typ.
Speed IGBT
15V
Max.
0.16
0.35
6.0
5.0
=
PD - 50047D
,
600
I
C
= 1.9V
=
V
05/14/02
250A
Units
Units
°C/W
N m
°C
W
V
A
V
g
.
1

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GA250TS60U Summary of contents

Page 1

... Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com GA250TS60U Ultra-Fast Max. 600 250 500 500 500 ±20 2500 780 400 ...

Page 2

... GA250TS60U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage — GE(th) J Forward Transconductance Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter Q Total Gate Charge (turn-on) ...

Page 3

... V , Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000  T = 150 100 10 = 15V Fig Typical Transfer Characteristics GA250TS60U ° ° C sink riv ifie d 170 tio 25V V = 50V CC CE 5µs PULSE WIDTH 80µs PULSE WIDTH ...

Page 4

... GA250TS60U 250 200 150 100 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case PULSE WIDTH 2.0 1.8 1.6 1.4 1.2 1.0 125 150 -60 -40 -20 ° C) Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature 0 ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs.  100 R = -60 -40 - Fig Typical Switching Losses vs. GA250TS60U = 400V = 250A 200 400 600 800 1000 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 0 = 15Ohm G2 = 15V = 360V  250 125 62 100 120 140 160 ° ...

Page 6

... GA250TS60U  15Ohm 125 C ° 360V 15V 100 200 300 I , Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current ° ° 1.0 2.0 3.0 4.0 5 lta Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 400 500 0 V Fig Reverse Bias SOA ...

Page 7

... 00A 50A I = 125A ° ° /µ Fig Typical Reverse Recovery vs. di www.irf.com /dt Fig Typical Recovery Current vs GA250TS60U I = 500A 250A ° ° /µ / ...

Page 8

... GA250TS60U Fig. 17a - Test Circuit for Measurement off(diode d(on Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining d(on ff d(off) f Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 17d - Test Waveforms for Circuit of Fig. 18a µ S Vce Ic dt ...

Page 9

... Figure 17e. Macro Waveforms for µ Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 480V Figure 19. Pulsed Collector Current GA250TS60U Test Circuit 480V @25°C C Test Circuit 9 ...

Page 10

... GA250TS60U Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. R See fig For screws M6. T For screws M5. U Pulse width 50µs; single shot. Case Outline — INT-A-PAK [ 80.30 3.161 79.70 3.138 34.70 1.366 33.70 1.327 [.314] MAX. 0.15 [.0059] CONVEX 92 ...

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