GA200TD120U Vishay, GA200TD120U Datasheet - Page 6

• Manufacturer Part Number: GA200TD120U
• Description: IGBT FAST 1200V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 37.343nF @ 30V
• Power - Max: 1040W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Dual INT-A-PAK (3 + 8)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: VS-GA200TD120U; VS-GA200TD120U; VSGA200TD120U; VSGA200TD120U

GA200TD120U
6
200
160
120
1 0 0 0
Fig. 13 - Typical Forward Voltage Drop vs.
80
40
1 0 0
Fig. 11 - Typical Switching Losses vs.
0
1 0
0
1.0

R
T
V
V
R
CC
GE
G
J
G1
Fo rward Voltag e D rop - V
Instantaneous Forward Current
Collector-to-Emitter Current
=15 ;R
= 150 C
= 720V
= 15V
= Ohm
2.0
I
100
°
C
G2
, Collector Current (A)
= 0
3.0
200
T = 125°C
T = 25°C
J
J
4.0
F M
(V )
300
5.0
400
Fig. 14 - Typical Stored Charge vs. di
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
2 0 0 0 0
1 6 0 0 0
1 2 0 0 0
8 0 0 0
4 0 0 0
0
0
V
T
V
0
5 0 0
G E
J
C E
V
Fig. 12 - Reverse Bias SOA
CE
= 125°C
= 20V
m easured at term inal (Peak Voltage)
2 0 0
I = 400A
I = 200A
I = 100A
F
F
F
, Collector-to-Em itter Voltage (V)
SAFE OPERATING AREA
4 0 0
1 0 0 0
di /dt - (A/µ s)
6 0 0
f
8 0 0
V = 72 0V
T = 1 25 °C
T = 2 5°C
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R
J
J
1 5 0 0
1 0 0 0
1 2 0 0
f
/dt
1 4 0 0
2 0 0 0
A