GA200TD120U Vishay, GA200TD120U Datasheet
GA200TD120U
Specifications of GA200TD120U
VS-GA200TD120U
VSGA200TD120U
VSGA200TD120U
Available stocks
Related parts for GA200TD120U
GA200TD120U Summary of contents
Page 1
... Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com GA200TD120U Ultra-Fast Max. 1200 200 400 400 400 ±20 2500 1040 540 ...
Page 2
... GA200TD120U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) DV /DT Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter Q Total Gate Charge (turn-on) ...
Page 3
... Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 T = 125 C 100 ° 15V 1 2.5 3.0 5.0 Fig Typical Transfer Characteristics GA200TD120U For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Dis sip ation = 160 W 10 ° ° ...
Page 4
... GA200TD120U 250 200 150 100 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.01 SIN ( Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature 0 ...
Page 5
... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 1000 R = 100 -60 -40 -20 Fig Typical Switching Losses vs. GA200TD120U = 400V 249A = 200A 400 800 1200 1600 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 0 = Ohm G2 = 15V = 720V 400 200 100 100 120 140 160 ° ...
Page 6
... GA200TD120U 200 R = Ohm 150 C ° 720V 15V 160 GE 120 100 200 I , Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 125° 25° 1.0 2.0 3.0 4.0 Fo rward Voltag e D rop - Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 300 400 ...
Page 7
... 20V ° 5° /dt - (A/µ Fig Typical Reverse Recovery vs. di www.irf.com 400A ° 5° 200A 100A I = 400A 200A 100A /dt Fig Typical Recovery Current vs GA200TD120U /dt - (A/µ / ...
Page 8
... GA200TD120U Fig. 17a - Test Circuit for Measurement off(diode d(on Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining d(on ff d(off) f Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 17d - Test Waveforms for Circuit of Fig. 18a µ S Vce Ic dt ...
Page 9
... Figure 17e. Macro Waveforms for µ Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 600V Figure 19. Pulsed Collector Current GA200TD120U Test Circuit 600V @25°C C Test Circuit 9 ...
Page 10
... GA200TD120U Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. R See fig For screws M6. T Pulse width 50µs; single shot. Case Outline — DUAL INT-A-PAK 107.30 [ 4.224 ] 106.30 4.185 93.30 [ 3.673 ] 92.70 3.650 [.314] 28.60 2X MAX. 27. 48.30 1.902 47.70 1 ...